In this contribution, pulsed laser deposition (PLD) in combination with high-pressure reflective high-energy electron diffraction (RHEED) is used to study the influence of different parameters including background pressure, substrate temperature, and repetition rate on film growth behaviour. The results are used for a new approach to impose layer-by-layer growth using the high saturation of the deposited material by PLD in combination with a very fast deposition of the amount of material for completing exactly one unit cell. With this approach, which we will call pulsed laser interval deposition (PLID), we are able to deposit complex oxide materials in a layer-by-layer growth regime where normally island growth occurs.
- Pulsed laser deposition
- Interval deposition
Blank, D. H. A., Koster, G., Rijnders, A. J. H. M., van Setten, E., Slycke, P., & Rogalla, H. (2000). Epitaxial growth of oxides with pulsed laser interval deposition. Journal of crystal growth, 211(211), 98-105. https://doi.org/10.1016/S0022-0248(99)00880-5