Epitaxial growth of oxides with pulsed laser interval deposition

Dave H.A. Blank, Gertjan Koster, Guus A.J.H.M. Rijnders, Eelco van Setten, Per Slycke, Horst Rogalla

Research output: Contribution to journalArticleAcademicpeer-review

46 Citations (Scopus)
1 Downloads (Pure)


In this contribution, pulsed laser deposition (PLD) in combination with high-pressure reflective high-energy electron diffraction (RHEED) is used to study the influence of different parameters including background pressure, substrate temperature, and repetition rate on film growth behaviour. The results are used for a new approach to impose layer-by-layer growth using the high saturation of the deposited material by PLD in combination with a very fast deposition of the amount of material for completing exactly one unit cell. With this approach, which we will call pulsed laser interval deposition (PLID), we are able to deposit complex oxide materials in a layer-by-layer growth regime where normally island growth occurs.
Original languageEnglish
Pages (from-to)98-105
Number of pages8
JournalJournal of crystal growth
Publication statusPublished - 2000


  • Pulsed laser deposition
  • Interval deposition
  • Oxides


Dive into the research topics of 'Epitaxial growth of oxides with pulsed laser interval deposition'. Together they form a unique fingerprint.

Cite this