Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Phu T.P. Le; Johan E. ten Elshof; Gertjan Koster

doi:10.1038/s41598-021-91848-2

Epitaxial lift-off of freestanding (011) and (111) SrRuO₃ thin films using a water sacrificial layer

Phu T.P. Le, Johan E. ten Elshof, Gertjan Koster^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO₃ thin films using Sr₃Al₂O₆ water-sacrificial layer. The epitaxial Sr₃Al₂O₆(011) and Sr₃Al₂O₆(111) layers were realized on SrTiO₃(011) and SrTiO₃(111), respectively. Subsequently, SrRuO₃ films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO₃(011)_pc and SrRuO₃(111)_pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

Original language	English
Article number	12435
Journal	Scientific reports
Volume	11
Issue number	1
Early online date	14 Jun 2021
DOIs	https://doi.org/10.1038/s41598-021-91848-2
Publication status	Published - Dec 2021

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s41598-021-91848-2Final published version, 2.43 MBLicence: CC BY

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title = "Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer",

abstract = "Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.",

author = "Le, {Phu T.P.} and {ten Elshof}, {Johan E.} and Gertjan Koster",

note = "Funding Information: P.T.P.L thanks Minh D. Nguyen for providing cut Si substrates. P.T.P.L, J.E.tE and G.K acknowledge the Netherlands Organisation for Scientific Research (NWO)/CW ECHO grant ECHO.15.CM2.043. Publisher Copyright: {\textcopyright} 2021, The Author(s). Financial transaction number: 342124101 ",

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AU - ten Elshof, Johan E.

AU - Koster, Gertjan

N1 - Funding Information: P.T.P.L thanks Minh D. Nguyen for providing cut Si substrates. P.T.P.L, J.E.tE and G.K acknowledge the Netherlands Organisation for Scientific Research (NWO)/CW ECHO grant ECHO.15.CM2.043. Publisher Copyright: © 2021, The Author(s). Financial transaction number: 342124101

PY - 2021/12

Y1 - 2021/12

N2 - Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

AB - Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

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Epitaxial lift-off of freestanding (011) and (111) SrRuO₃ thin films using a water sacrificial layer

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