Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Phu T.P. Le, Johan E. ten Elshof, Gertjan Koster*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

Original languageEnglish
Article number12435
JournalScientific reports
Volume11
Issue number1
Early online date14 Jun 2021
DOIs
Publication statusE-pub ahead of print/First online - 14 Jun 2021

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