Abstract
The aim of the work presented in this thesis is to fabricate an epitaxial magnetic tunnel transistor (MTT) consisting of a Niobium doped SrTiO3 collector, a La0.67Sr0.33MnO3 base, a SrTiO3 tunnel barrier and a Co emitter. The motivation is that this device is sensitive to the spin dependent scattering of hot electrons in a half-metallic ferromagnet. Further we anticipate that the high crystalline quality of the base will result in a large hot electron transmission.
Original language | Undefined |
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Awarding Institution |
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Supervisors/Advisors |
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Award date | 1 Jul 2005 |
Place of Publication | Enschede |
Publisher | |
Print ISBNs | 90-365-2222-6 |
Publication status | Published - Jul 2005 |
Keywords
- METIS-224676
- SMI-NE: From 2006 in EWI-NE
- EWI-5330
- IR-50766