Abstract
The aim of the work presented in this thesis is to fabricate an epitaxial magnetic tunnel transistor (MTT) consisting of a Niobium doped SrTiO3 collector, a La0.67Sr0.33MnO3 base, a SrTiO3 tunnel barrier and a Co emitter. The motivation is that this device is sensitive to the spin dependent scattering of hot electrons in a half-metallic ferromagnet. Further we anticipate that the high crystalline quality of the base will result in a large hot electron transmission.
| Original language | Undefined |
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| Award date | 1 Jul 2005 |
| Place of Publication | Enschede |
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| Print ISBNs | 90-365-2222-6 |
| Publication status | Published - Jul 2005 |
Keywords
- METIS-224676
- SMI-NE: From 2006 in EWI-NE
- EWI-5330
- IR-50766