Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (67/33) thin films with large tunable self-bias field controlled by a PbZr1−xTixO3 interfacial layer

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Abstract

Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 200 nm thick, (001) oriented, perovskite phase-pure films were grown on a range of PbZr1−xTixO3 buffer layers (x = 0.2–0.8) and sandwiched between SrRuO3 electrodes on (001) SrTiO3 substrates to form a ferroelectric capacitor structure. Devices without a buffer layer or with a buffer layer of highly tetragonal PbZr1−xTixO3 show very large self-bias fields up to 1.0 × 107 V/m. These self-bias fields correlate with strain gradient layers near the bottom electrode observed in these devices only. The large self-bias was explained quantitatively in terms of the flexoelectric effect
Original languageEnglish
Article number182909
Pages (from-to)-
JournalApplied physics letters
Volume104
Issue number18
DOIs
Publication statusPublished - 2014

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buffers
thin films
electrodes
capacitors
gradients

Keywords

  • METIS-303474
  • IR-90640

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@article{452998fe1cb4487982ba2815aec619d8,
title = "Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (67/33) thin films with large tunable self-bias field controlled by a PbZr1−xTixO3 interfacial layer",
abstract = "Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 200 nm thick, (001) oriented, perovskite phase-pure films were grown on a range of PbZr1−xTixO3 buffer layers (x = 0.2–0.8) and sandwiched between SrRuO3 electrodes on (001) SrTiO3 substrates to form a ferroelectric capacitor structure. Devices without a buffer layer or with a buffer layer of highly tetragonal PbZr1−xTixO3 show very large self-bias fields up to 1.0 × 107 V/m. These self-bias fields correlate with strain gradient layers near the bottom electrode observed in these devices only. The large self-bias was explained quantitatively in terms of the flexoelectric effect",
keywords = "METIS-303474, IR-90640",
author = "M. Boota and Houwman, {Evert Pieter} and Dekkers, {Jan M.} and Nguyen, {Duc Minh} and Rijnders, {Augustinus J.H.M.}",
year = "2014",
doi = "10.1063/1.4874978",
language = "English",
volume = "104",
pages = "--",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "18",

}

Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (67/33) thin films with large tunable self-bias field controlled by a PbZr1−xTixO3 interfacial layer. / Boota, M.; Houwman, Evert Pieter; Dekkers, Jan M.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.

In: Applied physics letters, Vol. 104, No. 18, 182909, 2014, p. -.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (67/33) thin films with large tunable self-bias field controlled by a PbZr1−xTixO3 interfacial layer

AU - Boota, M.

AU - Houwman, Evert Pieter

AU - Dekkers, Jan M.

AU - Nguyen, Duc Minh

AU - Rijnders, Augustinus J.H.M.

PY - 2014

Y1 - 2014

N2 - Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 200 nm thick, (001) oriented, perovskite phase-pure films were grown on a range of PbZr1−xTixO3 buffer layers (x = 0.2–0.8) and sandwiched between SrRuO3 electrodes on (001) SrTiO3 substrates to form a ferroelectric capacitor structure. Devices without a buffer layer or with a buffer layer of highly tetragonal PbZr1−xTixO3 show very large self-bias fields up to 1.0 × 107 V/m. These self-bias fields correlate with strain gradient layers near the bottom electrode observed in these devices only. The large self-bias was explained quantitatively in terms of the flexoelectric effect

AB - Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 200 nm thick, (001) oriented, perovskite phase-pure films were grown on a range of PbZr1−xTixO3 buffer layers (x = 0.2–0.8) and sandwiched between SrRuO3 electrodes on (001) SrTiO3 substrates to form a ferroelectric capacitor structure. Devices without a buffer layer or with a buffer layer of highly tetragonal PbZr1−xTixO3 show very large self-bias fields up to 1.0 × 107 V/m. These self-bias fields correlate with strain gradient layers near the bottom electrode observed in these devices only. The large self-bias was explained quantitatively in terms of the flexoelectric effect

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KW - IR-90640

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