Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

Lin Li, Zhaoliang Liao, Nicolas Gauquelin, Minh Duc Nguyen, Raymond J.E. Hueting, Dirk J. Gravesteijn, Ivan Lobato, Evert P. Houwman, Sorin Lazar, Johan Verbeeck, Gertjan Koster (Corresponding Author), Guus Rijnders

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
14 Downloads (Pure)

Abstract

Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.

Original languageEnglish
Article number1700921
JournalAdvanced materials interfaces
Volume5
Issue number2
Early online date27 Nov 2017
DOIs
Publication statusPublished - 23 Jan 2018

Fingerprint

Gallium nitride
Ferroelectric materials
Substrates
Epitaxial growth
Strain relaxation
Lattice mismatch
Epitaxial films
Buffer layers
Electronic equipment
Physical properties
Lead
Semiconductor materials
Thin films

Keywords

  • UT-Hybrid-D
  • Ferroelectric
  • Gallium nitride
  • Lead-zirconate-titanate (PZT)
  • Semiconductor
  • Epitaxial growth

Cite this

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title = "Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate",
abstract = "Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.",
keywords = "UT-Hybrid-D, Ferroelectric, Gallium nitride, Lead-zirconate-titanate (PZT), Semiconductor, Epitaxial growth",
author = "Lin Li and Zhaoliang Liao and Nicolas Gauquelin and Nguyen, {Minh Duc} and Hueting, {Raymond J.E.} and Gravesteijn, {Dirk J.} and Ivan Lobato and Houwman, {Evert P.} and Sorin Lazar and Johan Verbeeck and Gertjan Koster and Guus Rijnders",
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Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate. / Li, Lin; Liao, Zhaoliang; Gauquelin, Nicolas; Nguyen, Minh Duc; Hueting, Raymond J.E.; Gravesteijn, Dirk J.; Lobato, Ivan; Houwman, Evert P.; Lazar, Sorin; Verbeeck, Johan; Koster, Gertjan (Corresponding Author); Rijnders, Guus.

In: Advanced materials interfaces, Vol. 5, No. 2, 1700921, 23.01.2018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

AU - Li, Lin

AU - Liao, Zhaoliang

AU - Gauquelin, Nicolas

AU - Nguyen, Minh Duc

AU - Hueting, Raymond J.E.

AU - Gravesteijn, Dirk J.

AU - Lobato, Ivan

AU - Houwman, Evert P.

AU - Lazar, Sorin

AU - Verbeeck, Johan

AU - Koster, Gertjan

AU - Rijnders, Guus

N1 - Wiley deal

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N2 - Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.

AB - Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.

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KW - Ferroelectric

KW - Gallium nitride

KW - Lead-zirconate-titanate (PZT)

KW - Semiconductor

KW - Epitaxial growth

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M3 - Article

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JO - Advanced materials interfaces

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SN - 2196-7350

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