Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

Lin Li, Zhaoliang Liao, Nicolas Gauquelin, Minh Duc Nguyen, Raymond J.E. Hueting, Dirk J. Gravesteijn, Ivan Lobato, Evert P. Houwman, Sorin Lazar, Johan Verbeeck, Gertjan Koster* (Corresponding Author), Guus Rijnders

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)
20 Downloads (Pure)


Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.

Original languageEnglish
Article number1700921
JournalAdvanced materials interfaces
Issue number2
Early online date27 Nov 2017
Publication statusPublished - 23 Jan 2018


  • UT-Hybrid-D
  • Ferroelectric
  • Gallium nitride
  • Lead-zirconate-titanate (PZT)
  • Semiconductor
  • Epitaxial growth
  • 2023 OA procedure

Cite this