Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

C.C.G. Visser, L.K. Nanver, A. van den Bogaard

Research output: Contribution to journalConference articleAcademicpeer-review

3 Citations (Scopus)

Abstract

The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 kΩ and cut-off frequency of 31 GHz.

Original languageEnglish
Pages (from-to)105-110
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume533
DOIs
Publication statusPublished - 1998
Externally publishedYes
EventMRS Spring Meeting 1998 - San Francisco, United States
Duration: 13 Apr 199817 Apr 1998

Fingerprint Dive into the research topics of 'Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters'. Together they form a unique fingerprint.

Cite this