Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

C.C.G. Visser; L.K. Nanver; A. van den Bogaard

doi:10.1557/PROC-533-105

Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

C.C.G. Visser, L.K. Nanver, A. van den Bogaard

Research output: Contribution to journal › Conference article › Academic › peer-review

3 Citations (Scopus)

Abstract

The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n⁺ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 kΩ and cut-off frequency of 31 GHz.

Original language	English
Pages (from-to)	105-110
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	533
DOIs	https://doi.org/10.1557/PROC-533-105
Publication status	Published - 1998
Externally published	Yes
Event	MRS Spring Meeting 1998 - San Francisco, United States Duration: 13 Apr 1998 → 17 Apr 1998

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@article{09bb38cf765645b98c5028d4c5c314b3,

title = "Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters",

abstract = "The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 kΩ and cut-off frequency of 31 GHz.",

author = "C.C.G. Visser and L.K. Nanver and {van den Bogaard}, A.",

year = "1998",

doi = "10.1557/PROC-533-105",

language = "English",

volume = "533",

pages = "105--110",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MRS Spring Meeting 1998 ; Conference date: 13-04-1998 Through 17-04-1998",

}

TY - JOUR

T1 - Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

AU - Visser, C.C.G.

AU - Nanver, L.K.

AU - van den Bogaard, A.

PY - 1998

Y1 - 1998

N2 - The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 kΩ and cut-off frequency of 31 GHz.

AB - The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 kΩ and cut-off frequency of 31 GHz.

U2 - 10.1557/PROC-533-105

DO - 10.1557/PROC-533-105

M3 - Conference article

AN - SCOPUS:0032297724

SN - 0272-9172

VL - 533

SP - 105

EP - 110

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MRS Spring Meeting 1998

Y2 - 13 April 1998 through 17 April 1998

ER -

Epitaxially grown n+ phosphorus collector peaks in high-frequency HBT's with implanted emitters

Abstract

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