The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 kΩ and cut-off frequency of 31 GHz.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1998|
|Event||MRS Spring Meeting 1998 - San Francisco, United States|
Duration: 13 Apr 1998 → 17 Apr 1998