Equilibrium structure of Si(001) in relation to adsorption processes during silicon CVD

J. G.E. Gardeniers*, F. de Jong, L. J. Giling

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

The equilibrium coverage of the Si(001)-(l × 1) surface with species from the Si-H CVD system at 1 atm is calculated as a function of temperature. It is found that for all temperatures between 800 and 1600 K the Si(001)-(1 × 1) surface is almost completely filled with growth species. This result is consistent with the prediction from PBC theory that the broken bond Si(001) face is a rough face, but clearly in contradiction with experimental observations of {001} faces on silicon crystals and the presence of growth steps on these faces. By an investigation of the effect of supersaturation on the coverage of the dimer reconstructed Si(001)-(2 × 1) surface it is demonstrated that the dimer reconstruction provides a barrier for the nucleation of growth on this surface. Comparison with the effects of supersaturation on the coverage of Si(111) shows that growth on the (111) and the dimer reconstructed (001) faces is very similar. Because of the nucleation barriers on these two faces, they will both grow by steps.

Original languageEnglish
Pages (from-to)123-130
Number of pages8
JournalSurface science
Volume233
Issue number1-2
DOIs
Publication statusPublished - 1 Jul 1990
Externally publishedYes

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