Abstract
Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].
| Original language | Undefined |
|---|---|
| Title of host publication | Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser |
| Place of Publication | Trento, Italy |
| Publisher | University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute |
| Pages | 14 |
| Number of pages | 1 |
| ISBN (Print) | not assigned |
| Publication status | Published - 2008 |
Publication series
| Name | |
|---|---|
| Publisher | University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute |
| Number | WP 08-02 |
Keywords
- IOMS-APD: Active Photonic Devices
- METIS-255126
- IR-65307
- EWI-14892
Cite this
Pollnau, M. (2008). Er-doped aluminium oxide waveguide amplifiers. In Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser (pp. 14). Trento, Italy: University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute.