Er-doped aluminium oxide waveguide amplifiers

Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    Abstract

    Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].
    Original languageUndefined
    Title of host publicationBook of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser
    Place of PublicationTrento, Italy
    PublisherUniversity of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute
    Pages14
    Number of pages1
    ISBN (Print)not assigned
    Publication statusPublished - 2008

    Publication series

    Name
    PublisherUniversity of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute
    NumberWP 08-02

    Keywords

    • IOMS-APD: Active Photonic Devices
    • METIS-255126
    • IR-65307
    • EWI-14892

    Cite this

    Pollnau, M. (2008). Er-doped aluminium oxide waveguide amplifiers. In Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser (pp. 14). Trento, Italy: University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute.