Er-doped aluminium oxide waveguide amplifiers

Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

14 Downloads (Pure)

Abstract

Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].
Original languageUndefined
Title of host publicationBook of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser
Place of PublicationTrento, Italy
PublisherUniversity of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute
Pages14
Number of pages1
ISBN (Print)not assigned
Publication statusPublished - 2008

Publication series

Name
PublisherUniversity of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute
NumberWP 08-02

Keywords

  • IOMS-APD: Active Photonic Devices
  • METIS-255126
  • IR-65307
  • EWI-14892

Cite this

Pollnau, M. (2008). Er-doped aluminium oxide waveguide amplifiers. In Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser (pp. 14). Trento, Italy: University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute.
Pollnau, Markus. / Er-doped aluminium oxide waveguide amplifiers. Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser. Trento, Italy : University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute, 2008. pp. 14
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title = "Er-doped aluminium oxide waveguide amplifiers",
abstract = "Within the EU STREP project {"}Photonic integrated devices in activated amorphous and crystalline oxides{"} (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].",
keywords = "IOMS-APD: Active Photonic Devices, METIS-255126, IR-65307, EWI-14892",
author = "Markus Pollnau",
note = "Invited Talk",
year = "2008",
language = "Undefined",
isbn = "not assigned",
publisher = "University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute",
number = "WP 08-02",
pages = "14",
booktitle = "Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser",

}

Pollnau, M 2008, Er-doped aluminium oxide waveguide amplifiers. in Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser. University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute, Trento, Italy, pp. 14.

Er-doped aluminium oxide waveguide amplifiers. / Pollnau, Markus.

Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser. Trento, Italy : University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute, 2008. p. 14.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Er-doped aluminium oxide waveguide amplifiers

AU - Pollnau, Markus

N1 - Invited Talk

PY - 2008

Y1 - 2008

N2 - Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].

AB - Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].

KW - IOMS-APD: Active Photonic Devices

KW - METIS-255126

KW - IR-65307

KW - EWI-14892

M3 - Conference contribution

SN - not assigned

SP - 14

BT - Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser

PB - University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute

CY - Trento, Italy

ER -

Pollnau M. Er-doped aluminium oxide waveguide amplifiers. In Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser. Trento, Italy: University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute. 2008. p. 14