Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching , we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm .
|Publisher||University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute|
|Workshop||Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser|
|Period||13/04/08 → 15/04/08|
|Other||13-15 April 2008|
- IOMS-APD: Active Photonic Devices