Er-doped aluminium oxide waveguide amplifiers

Markus Pollnau

Er-doped aluminium oxide waveguide amplifiers

Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].

Original language	Undefined
Title of host publication	Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser
Place of Publication	Trento, Italy
Publisher	University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute
Pages	14
Number of pages	1
ISBN (Print)	not assigned
Publication status	Published - 2008
Event	Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser - Levico Terme - Trento - Italy Duration: 13 Apr 2008 → 15 Apr 2008

Publication series

Name
Publisher	University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute
Number	WP 08-02

Workshop

Workshop	Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser
Period	13/04/08 → 15/04/08
Other	13-15 April 2008

Keywords

IOMS-APD: Active Photonic Devices
METIS-255126
IR-65307
EWI-14892

Access to Document

Cite this

@inproceedings{27bac7f84168467b90a8fa5c92fb7252,

title = "Er-doped aluminium oxide waveguide amplifiers",

abstract = "Within the EU STREP project {"}Photonic integrated devices in activated amorphous and crystalline oxides{"} (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous \$Al\_2O\_3\$ and crystalline \$Y\_2O\_3)\$. In \$Al\_2O\_3\$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].",

keywords = "IOMS-APD: Active Photonic Devices, METIS-255126, IR-65307, EWI-14892",

author = "Markus Pollnau",

note = "Invited Talk; Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser ; Conference date: 13-04-2008 Through 15-04-2008",

year = "2008",

language = "Undefined",

isbn = "not assigned",

publisher = "University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute",

number = "WP 08-02",

pages = "14",

booktitle = "Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser",

}

TY - GEN

T1 - Er-doped aluminium oxide waveguide amplifiers

AU - Pollnau, Markus

N1 - Invited Talk

PY - 2008

Y1 - 2008

N2 - Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].

AB - Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].

KW - IOMS-APD: Active Photonic Devices

KW - METIS-255126

KW - IR-65307

KW - EWI-14892

M3 - Conference contribution

SN - not assigned

SP - 14

BT - Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser

PB - University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute

CY - Trento, Italy

T2 - Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser

Y2 - 13 April 2008 through 15 April 2008

ER -