Erbium doped LaF3 nanoparticles incorporated in silicondioxide thin films for active integrated optical applications

R. Dekker, V Sudarsan, F.C.J.M. van Veggel, Kerstin Worhoff, A. Driessen

    Research output: Chapter in Book/Report/Conference proceedingChapterAcademic

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    Abstract

    We report on the low-cost processing of erbium doped lanthanum trifluoride (LaF3:Er) nanoparticles dispersed in silicondioxide (SiO2) films prepared through the sol-gel method. The influence of particle concentration and annealing temperature on the optical properties and its implications on scattering in the visible wavelength range will be discussed. Uniform, crackfree and low loss films have been obtained by spincoating multiple layers followed by several annealing steps. The lanthanum trifluoride host shields the erbium from the OH-groups present in the silicondioxide, resulting in a higher excited state lifetime of the erbium due to the reduced OH-quenching.
    Original languageUndefined
    Title of host publicationIEEE/LEOS Benelux Chapter 2004 Annual Symposium : December 2 & 3, 2004, Ghent University
    Place of PublicationGhent, Belgium
    PublisherGhent University
    Pages295-298
    Number of pages4
    ISBN (Print)9789076546063
    Publication statusPublished - 2004
    Event9th Annual Symposium IEEE/LEOS Benelux Chapter 2004 - Ghent, Belgium
    Duration: 2 Dec 20043 Dec 2004
    Conference number: 9

    Publication series

    Name
    PublisherGhent University

    Conference

    Conference9th Annual Symposium IEEE/LEOS Benelux Chapter 2004
    CountryBelgium
    CityGhent
    Period2/12/043/12/04

    Keywords

    • IR-58215

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