Abstract
| Original language | English |
|---|---|
| Title of host publication | Photonics Europe |
| Editors | Laurent Vivien, Seppo Honkanen, Lorenzo Pavesi, Stefano Pelli, Jung Hun Shin |
| Place of Publication | Bellingham, WA |
| Publisher | SPIE |
| Pages | Paper 913308 |
| Number of pages | 6 |
| ISBN (Print) | 978-1-62841-081-5 |
| DOIs | |
| Publication status | Published - May 2014 |
Publication series
| Name | Proceedings of the SPIE |
|---|---|
| Publisher | SPIE |
| Number | 913308 |
| Volume | 9133 |
| ISSN (Print) | 0277-786X |
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Keywords
- EWI-24710
- IR-90655
- METIS-304093
- IOMS-APD: Active Photonic Devices
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Erbium-doped spiral amplifiers with 20 dB gain on a silicon chip. / Vázquez-Córdova, Sergio Andrés; Bernhardi, Edward; Worhoff, Kerstin; García Blanco, Sonia Maria; Pollnau, Markus.
Photonics Europe. ed. / Laurent Vivien; Seppo Honkanen; Lorenzo Pavesi; Stefano Pelli; Jung Hun Shin. Bellingham, WA : SPIE, 2014. p. Paper 913308 (Proceedings of the SPIE; Vol. 9133, No. 913308).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Erbium-doped spiral amplifiers with 20 dB gain on a silicon chip
AU - Vázquez-Córdova, Sergio Andrés
AU - Bernhardi, Edward
AU - Worhoff, Kerstin
AU - García Blanco, Sonia Maria
AU - Pollnau, Markus
N1 - eemcs-eprint-24710 - Paper 913308
PY - 2014/5
Y1 - 2014/5
N2 - We report the fabrication and optical characterization of long, spiral-shaped erbium-doped aluminum oxide (Al2O3:Er3+) channel waveguides for achieving high overall signal amplification on a small footprint. Al2O3:Er3+ films with Er3+ concentrations in the range between 0.443.1×10^20 cm^-3 were deposited by reactive co-sputtering onto standard, thermally oxidized silicon substrates. Spiral-shaped waveguides were designed and structured into the films by chlorine-based reactive ion etching. In the current design, each spiral waveguide occupies an area of 1 cm^2. Typical background propagation losses near 1500 nm are (0.2±0.1) dB/cm. A commercially available, pigtailed diode laser at 976 nm was employed as the pump source. The erbium-doped waveguide amplifiers were characterized in the small-signal-gain regime at the peak-gain wavelength (λ = 1532 nm) of Al2O3:Er3+. A maximum of 20 dB of internal net gain was measured for a 24.5-cm-long spiral waveguide with an Er3+ concentration of 0.95×10^20 cm^-3. Similar results were obtained for a shorter spiral with an Er3+ concentration about twice as high. Samples with lower concentration exhibited lower gain because of insufficient pump absorption, while samples with higher concentration showed less gain because of migration-accelerated energy transfer up-conversion and, more importantly, a fast quenching process.
AB - We report the fabrication and optical characterization of long, spiral-shaped erbium-doped aluminum oxide (Al2O3:Er3+) channel waveguides for achieving high overall signal amplification on a small footprint. Al2O3:Er3+ films with Er3+ concentrations in the range between 0.443.1×10^20 cm^-3 were deposited by reactive co-sputtering onto standard, thermally oxidized silicon substrates. Spiral-shaped waveguides were designed and structured into the films by chlorine-based reactive ion etching. In the current design, each spiral waveguide occupies an area of 1 cm^2. Typical background propagation losses near 1500 nm are (0.2±0.1) dB/cm. A commercially available, pigtailed diode laser at 976 nm was employed as the pump source. The erbium-doped waveguide amplifiers were characterized in the small-signal-gain regime at the peak-gain wavelength (λ = 1532 nm) of Al2O3:Er3+. A maximum of 20 dB of internal net gain was measured for a 24.5-cm-long spiral waveguide with an Er3+ concentration of 0.95×10^20 cm^-3. Similar results were obtained for a shorter spiral with an Er3+ concentration about twice as high. Samples with lower concentration exhibited lower gain because of insufficient pump absorption, while samples with higher concentration showed less gain because of migration-accelerated energy transfer up-conversion and, more importantly, a fast quenching process.
KW - EWI-24710
KW - IR-90655
KW - METIS-304093
KW - IOMS-APD: Active Photonic Devices
U2 - 10.1117/12.2052298
DO - 10.1117/12.2052298
M3 - Conference contribution
SN - 978-1-62841-081-5
T3 - Proceedings of the SPIE
SP - Paper 913308
BT - Photonics Europe
A2 - Vivien, Laurent
A2 - Honkanen, Seppo
A2 - Pavesi, Lorenzo
A2 - Pelli, Stefano
A2 - Shin, Jung Hun
PB - SPIE
CY - Bellingham, WA
ER -