Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

Sergio A. Vázquez-Córdova, Mindert Dijkstra, Edward H. Bernhardi, F. Ay, Kerstin Wörhoff, Jennifer L. Herek, Sonia M. García-Blanco, Markus Pollnau

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Abstract

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.
Original languageEnglish
Pages (from-to)25993-26004
Number of pages12
JournalOptics express
Volume22
Issue number21
DOIs
Publication statusPublished - Oct 2014

Fingerprint

erbium
amplifiers
silicon
waveguides
aluminum oxides
wafers
saturation
temperature dependence
configurations
wavelengths

Keywords

  • IOMS-APD: Active Photonic Devices
  • Optical amplifiers
  • Integrated optics
  • Rare earth doped materials
  • Glass waveguides

Cite this

Vázquez-Córdova, S. A., Dijkstra, M., Bernhardi, E. H., Ay, F., Wörhoff, K., Herek, J. L., ... Pollnau, M. (2014). Erbium-doped spiral amplifiers with 20 dB of net gain on silicon. Optics express, 22(21), 25993-26004. https://doi.org/10.1364/OE.22.025993
Vázquez-Córdova, Sergio A. ; Dijkstra, Mindert ; Bernhardi, Edward H. ; Ay, F. ; Wörhoff, Kerstin ; Herek, Jennifer L. ; García-Blanco, Sonia M. ; Pollnau, Markus. / Erbium-doped spiral amplifiers with 20 dB of net gain on silicon. In: Optics express. 2014 ; Vol. 22, No. 21. pp. 25993-26004.
@article{f9de77fb747b4b099e89aeeae38f5a7c,
title = "Erbium-doped spiral amplifiers with 20 dB of net gain on silicon",
abstract = "Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.",
keywords = "IOMS-APD: Active Photonic Devices, Optical amplifiers, Integrated optics, Rare earth doped materials, Glass waveguides",
author = "V{\'a}zquez-C{\'o}rdova, {Sergio A.} and Mindert Dijkstra and Bernhardi, {Edward H.} and F. Ay and Kerstin W{\"o}rhoff and Herek, {Jennifer L.} and Garc{\'i}a-Blanco, {Sonia M.} and Markus Pollnau",
year = "2014",
month = "10",
doi = "10.1364/OE.22.025993",
language = "English",
volume = "22",
pages = "25993--26004",
journal = "Optics express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "21",

}

Vázquez-Córdova, SA, Dijkstra, M, Bernhardi, EH, Ay, F, Wörhoff, K, Herek, JL, García-Blanco, SM & Pollnau, M 2014, 'Erbium-doped spiral amplifiers with 20 dB of net gain on silicon', Optics express, vol. 22, no. 21, pp. 25993-26004. https://doi.org/10.1364/OE.22.025993

Erbium-doped spiral amplifiers with 20 dB of net gain on silicon. / Vázquez-Córdova, Sergio A.; Dijkstra, Mindert; Bernhardi, Edward H.; Ay, F.; Wörhoff, Kerstin; Herek, Jennifer L.; García-Blanco, Sonia M.; Pollnau, Markus.

In: Optics express, Vol. 22, No. 21, 10.2014, p. 25993-26004.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

AU - Vázquez-Córdova, Sergio A.

AU - Dijkstra, Mindert

AU - Bernhardi, Edward H.

AU - Ay, F.

AU - Wörhoff, Kerstin

AU - Herek, Jennifer L.

AU - García-Blanco, Sonia M.

AU - Pollnau, Markus

PY - 2014/10

Y1 - 2014/10

N2 - Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

AB - Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

KW - IOMS-APD: Active Photonic Devices

KW - Optical amplifiers

KW - Integrated optics

KW - Rare earth doped materials

KW - Glass waveguides

U2 - 10.1364/OE.22.025993

DO - 10.1364/OE.22.025993

M3 - Article

VL - 22

SP - 25993

EP - 26004

JO - Optics express

JF - Optics express

SN - 1094-4087

IS - 21

ER -

Vázquez-Córdova SA, Dijkstra M, Bernhardi EH, Ay F, Wörhoff K, Herek JL et al. Erbium-doped spiral amplifiers with 20 dB of net gain on silicon. Optics express. 2014 Oct;22(21):25993-26004. https://doi.org/10.1364/OE.22.025993