Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

Sergio A. Vázquez-Córdova; Mindert Dijkstra; Edward H. Bernhardi; Feridun Ay; Kerstin Wörhoff; Jennifer L. Herek; Sonia M. García-Blanco; Markus Pollnau

doi:10.1364/OE.22.025993

Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

Sergio A. Vázquez-Córdova, Mindert Dijkstra, Edward H. Bernhardi, Feridun Ay, Kerstin Wörhoff, Jennifer L. Herek, Sonia M. García-Blanco, Markus Pollnau

Optical Sciences

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Abstract

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

Original language	English
Pages (from-to)	25993-26004
Number of pages	12
Journal	Optics express
Volume	22
Issue number	21
DOIs	https://doi.org/10.1364/OE.22.025993
Publication status	Published - Oct 2014

Keywords

IOMS-APD: Active Photonic Devices
Optical amplifiers
Integrated optics
Rare earth doped materials
Glass waveguides

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title = "Erbium-doped spiral amplifiers with 20 dB of net gain on silicon",

abstract = "Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.",

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year = "2014",

month = oct,

doi = "10.1364/OE.22.025993",

language = "English",

volume = "22",

pages = "25993--26004",

journal = "Optics express",

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T1 - Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

AU - Vázquez-Córdova, Sergio A.

AU - Dijkstra, Mindert

AU - Bernhardi, Edward H.

AU - Ay, Feridun

AU - Wörhoff, Kerstin

AU - Herek, Jennifer L.

AU - García-Blanco, Sonia M.

AU - Pollnau, Markus

PY - 2014/10

Y1 - 2014/10

N2 - Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

AB - Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

KW - IOMS-APD: Active Photonic Devices

KW - Optical amplifiers

KW - Integrated optics

KW - Rare earth doped materials

KW - Glass waveguides

U2 - 10.1364/OE.22.025993

DO - 10.1364/OE.22.025993

M3 - Article

SN - 1094-4087

VL - 22

SP - 25993

EP - 26004

JO - Optics express

JF - Optics express

IS - 21

ER -

Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

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