Erbium-doped spiral amplifiers with 20 dB of net gain on silicon

Sergio A. Vázquez-Córdova, Mindert Dijkstra, Edward H. Bernhardi, F. Ay, Kerstin Wörhoff, Jennifer L. Herek, Sonia M. García-Blanco, Markus Pollnau

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Abstract

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10^20 cm^-3 and 0.95 × 10^20 cm^-3, respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.
Original languageEnglish
Pages (from-to)25993-26004
Number of pages12
JournalOptics express
Volume22
Issue number21
DOIs
Publication statusPublished - Oct 2014

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Keywords

  • IOMS-APD: Active Photonic Devices
  • Optical amplifiers
  • Integrated optics
  • Rare earth doped materials
  • Glass waveguides

Cite this

Vázquez-Córdova, S. A., Dijkstra, M., Bernhardi, E. H., Ay, F., Wörhoff, K., Herek, J. L., ... Pollnau, M. (2014). Erbium-doped spiral amplifiers with 20 dB of net gain on silicon. Optics express, 22(21), 25993-26004. https://doi.org/10.1364/OE.22.025993