Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

N. Golo-Tosic, S. van der Wal, F.G. Kuper, A.J. Mouthaan

Research output: Contribution to journal › Article › Academic › peer-review

Keywords

@article{5095af87894847e782070adc0739a641,

title = "Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors",

keywords = "METIS-210016",

author = "N. Golo-Tosic and {van der Wal}, S. and F.G. Kuper and A.J. Mouthaan",

year = "2002",

language = "Undefined",

volume = "80",

pages = "3337--3339",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

AU - Golo-Tosic, N.

AU - van der Wal, S.

AU - Kuper, F.G.

AU - Mouthaan, A.J.

PY - 2002

Y1 - 2002

KW - METIS-210016

M3 - Article

SN - 0003-6951

VL - 80

SP - 3337

EP - 3339

JO - Applied physics letters

JF - Applied physics letters

IS - 18

ER -