Abstract
New methodologies in anisotropic wet-chemical etching of <111>-oriented silicon, allowing useful process designs combined with smart mask-to-crystal-orientation-alignment are presented in this paper. The described methods yield smooth surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching and wall passivation, structures can be etched at different depths in a wafer. Designs, using the <111>-crystal orientation, supplemented with pictures of fabricated devices, demonstrate the potential of using <111>-oriented wafers in microsystem design.
Original language | Undefined |
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Pages (from-to) | 390-398 |
Number of pages | 9 |
Journal | Journal of microelectromechanical systems |
Volume | 9 |
Issue number | 3 |
DOIs | |
Publication status | Published - Sep 2000 |
Keywords
- IR-14637
- METIS-111713
- EWI-12926