Etching methodologies in -oriented silicon wafers

R.E. Oosterbroek, Johan W. Berenschot, Henricus V. Jansen, A.J. Nijdam, G. Pandraud, Albert van den Berg, Michael Curt Elwenspoek

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    Abstract

    New methodologies in anisotropic wet-chemical etching of <111>-oriented silicon, allowing useful process designs combined with smart mask-to-crystal-orientation-alignment are presented in this paper. The described methods yield smooth surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching and wall passivation, structures can be etched at different depths in a wafer. Designs, using the <111>-crystal orientation, supplemented with pictures of fabricated devices, demonstrate the potential of using <111>-oriented wafers in microsystem design.
    Original languageUndefined
    Pages (from-to)390-398
    Number of pages9
    JournalJournal of microelectromechanical systems
    Volume9
    Issue number3
    DOIs
    Publication statusPublished - Sep 2000

    Keywords

    • IR-14637
    • METIS-111713
    • EWI-12926

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