Etching pits and dislocations in Si{111}

A.J. Nijdam, Johannes G.E. Gardeniers, C. Gui, Michael Curt Elwenspoek

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17 Citations (Scopus)

Abstract

The nature of etch pits that arise during anisotropic etching in KOH on Si{111} surfaces was investigated. It was verified that bulk stacking faults in the crystal lattice give rise to deep etching pits, Other types of dislocations, of which the nature is still unclear, were also found to be present, but these do not give rise to etching pits.
Original languageUndefined
Pages (from-to)238-247
Number of pages10
JournalSensors and actuators. A: Physical
Volume86
Issue number3
DOIs
Publication statusPublished - Nov 2000

Keywords

  • METIS-111714
  • IR-14639
  • EWI-13200

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