Etching pits and dislocations in Si{111}

A.J. Nijdam; Johannes G.E. Gardeniers; C. Gui; Michael Curt Elwenspoek

doi:10.1016/S0924-4247(00)00458-1

Etching pits and dislocations in Si{111}

A.J. Nijdam, Johannes G.E. Gardeniers, C. Gui, Michael Curt Elwenspoek

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Abstract

The nature of etch pits that arise during anisotropic etching in KOH on Si{111} surfaces was investigated. It was verified that bulk stacking faults in the crystal lattice give rise to deep etching pits, Other types of dislocations, of which the nature is still unclear, were also found to be present, but these do not give rise to etching pits.

Original language	Undefined
Pages (from-to)	238-247
Number of pages	10
Journal	Sensors and Actuators A: Physical
Volume	86
Issue number	3
DOIs	https://doi.org/10.1016/S0924-4247(00)00458-1
Publication status	Published - Nov 2000

Keywords

METIS-111714
IR-14639
EWI-13200

Access to Document

10.1016/S0924-4247(00)00458-1

http://eprints.eemcs.utwente.nl/secure2/13200/01/JSAA_86_238.pdf

Cite this

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title = "Etching pits and dislocations in Si{111}",

abstract = "The nature of etch pits that arise during anisotropic etching in KOH on Si{111} surfaces was investigated. It was verified that bulk stacking faults in the crystal lattice give rise to deep etching pits, Other types of dislocations, of which the nature is still unclear, were also found to be present, but these do not give rise to etching pits.",

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author = "A.J. Nijdam and Gardeniers, {Johannes G.E.} and C. Gui and Elwenspoek, {Michael Curt}",

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AU - Nijdam, A.J.

AU - Gardeniers, Johannes G.E.

AU - Gui, C.

AU - Elwenspoek, Michael Curt

PY - 2000/11

Y1 - 2000/11

N2 - The nature of etch pits that arise during anisotropic etching in KOH on Si{111} surfaces was investigated. It was verified that bulk stacking faults in the crystal lattice give rise to deep etching pits, Other types of dislocations, of which the nature is still unclear, were also found to be present, but these do not give rise to etching pits.

AB - The nature of etch pits that arise during anisotropic etching in KOH on Si{111} surfaces was investigated. It was verified that bulk stacking faults in the crystal lattice give rise to deep etching pits, Other types of dislocations, of which the nature is still unclear, were also found to be present, but these do not give rise to etching pits.

KW - METIS-111714

KW - IR-14639

KW - EWI-13200

U2 - 10.1016/S0924-4247(00)00458-1

DO - 10.1016/S0924-4247(00)00458-1

M3 - Article

SN - 0924-4247

VL - 86

SP - 238

EP - 247

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 3

ER -