EUV Lithography at Threshold of High-Volume Manufacturing∗

Anthony Yen; Hans Meiling; Jos Benschop

doi:10.1109/IEDM.2018.8614502

EUV Lithography at Threshold of High-Volume Manufacturing∗

Anthony Yen, Hans Meiling, Jos Benschop

XUV Optics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

6 Downloads (Pure)

Abstract

A throughput of >140 wph at a dose of 20 mJ/cm ² has been achieved on NXE:3400B EUV exposure systems, using a source power of 250W. Power degradation rate has been concurrently driven down so that high system throughput can be maintained. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle, and solid progress on the pellicle has enabled it to provide an EUV transmission of 83% at high source power. ASML continues to improve the performance of EUV scanners with higher throughput and tighter overlay specifications to further enhance their productivity and capability. Further improvements in resist and mask absorber materials are required to extend EUV single patterning to low k 1. ASML has also started to develop a next-generation N A=0 EUV exposure tool to enable continued scaling in semiconductor manufacturing.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	IEEE
Pages	11.6.1-11.6.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614502
Publication status	Published - 16 Jan 2019
Event	64th IEEE International Electron Devices Meeting, IEDM 2018 - Hilton San Francisco Union Square, San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018 Conference number: 64 https://ieee-iedm.org/2018/

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th IEEE International Electron Devices Meeting, IEDM 2018
Abbreviated title	IEDM
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18
Internet address	https://ieee-iedm.org/2018/

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10.1109/IEDM.2018.8614502

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title = "EUV Lithography at Threshold of High-Volume Manufacturing∗",

abstract = " A throughput of >140 wph at a dose of 20 mJ/cm 2 has been achieved on NXE:3400B EUV exposure systems, using a source power of 250W. Power degradation rate has been concurrently driven down so that high system throughput can be maintained. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle, and solid progress on the pellicle has enabled it to provide an EUV transmission of 83% at high source power. ASML continues to improve the performance of EUV scanners with higher throughput and tighter overlay specifications to further enhance their productivity and capability. Further improvements in resist and mask absorber materials are required to extend EUV single patterning to low k 1. ASML has also started to develop a next-generation N A=0 EUV exposure tool to enable continued scaling in semiconductor manufacturing. ",

author = "Anthony Yen and Hans Meiling and Jos Benschop",

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publisher = "IEEE",

pages = "11.6.1--11.6.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

address = "United States",

note = "64th IEEE International Electron Devices Meeting, IEDM 2018, IEDM ; Conference date: 01-12-2018 Through 05-12-2018",

url = "https://ieee-iedm.org/2018/",

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Yen, A, Meiling, H & Benschop, J 2019, EUV Lithography at Threshold of High-Volume Manufacturing∗. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614502, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, IEEE, pp. 11.6.1-11.6.4, 64th IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, California, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614502

EUV Lithography at Threshold of High-Volume Manufacturing∗. / Yen, Anthony; Meiling, Hans; Benschop, Jos.
2018 IEEE International Electron Devices Meeting, IEDM 2018. IEEE, 2019. p. 11.6.1-11.6.4 8614502 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - A throughput of >140 wph at a dose of 20 mJ/cm 2 has been achieved on NXE:3400B EUV exposure systems, using a source power of 250W. Power degradation rate has been concurrently driven down so that high system throughput can be maintained. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle, and solid progress on the pellicle has enabled it to provide an EUV transmission of 83% at high source power. ASML continues to improve the performance of EUV scanners with higher throughput and tighter overlay specifications to further enhance their productivity and capability. Further improvements in resist and mask absorber materials are required to extend EUV single patterning to low k 1. ASML has also started to develop a next-generation N A=0 EUV exposure tool to enable continued scaling in semiconductor manufacturing.

AB - A throughput of >140 wph at a dose of 20 mJ/cm 2 has been achieved on NXE:3400B EUV exposure systems, using a source power of 250W. Power degradation rate has been concurrently driven down so that high system throughput can be maintained. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle, and solid progress on the pellicle has enabled it to provide an EUV transmission of 83% at high source power. ASML continues to improve the performance of EUV scanners with higher throughput and tighter overlay specifications to further enhance their productivity and capability. Further improvements in resist and mask absorber materials are required to extend EUV single patterning to low k 1. ASML has also started to develop a next-generation N A=0 EUV exposure tool to enable continued scaling in semiconductor manufacturing.

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EUV Lithography at Threshold of High-Volume Manufacturing∗

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