EUV Lithography at Threshold of High-Volume Manufacturing∗

Anthony Yen, Hans Meiling, Jos Benschop

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

A throughput of >140 wph at a dose of 20 mJ/cm 2 has been achieved on NXE:3400B EUV exposure systems, using a source power of 250W. Power degradation rate has been concurrently driven down so that high system throughput can be maintained. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle, and solid progress on the pellicle has enabled it to provide an EUV transmission of 83% at high source power. ASML continues to improve the performance of EUV scanners with higher throughput and tighter overlay specifications to further enhance their productivity and capability. Further improvements in resist and mask absorber materials are required to extend EUV single patterning to low k 1. ASML has also started to develop a next-generation N A=0 EUV exposure tool to enable continued scaling in semiconductor manufacturing.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherIEEE
Pages11.6.1-11.6.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 16 Jan 2019
Event64th IEEE International Electron Devices Meeting, IEDM 2018 - Hilton San Francisco Union Square, San Francisco, United States
Duration: 1 Dec 20185 Dec 2018
Conference number: 64
https://ieee-iedm.org/2018/

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th IEEE International Electron Devices Meeting, IEDM 2018
Abbreviated titleIEDM
CountryUnited States
CitySan Francisco
Period1/12/185/12/18
Internet address

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