EUV-mirror, optical system with EUV-mirror and associated operating method

U. Dinger; Frederik Bijkerk; Muharrem Bayraktar; O. Dier

EUV-mirror, optical system with EUV-mirror and associated operating method

U. Dinger (Inventor), Frederik Bijkerk (Inventor), Muharrem Bayraktar (Inventor), O. Dier (Inventor)

Research output: Patent

Abstract

An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.

Original language	English
Patent number	US201615262272 20160912
Priority date	21/03/12
Publication status	Submitted - 29 Dec 2016

Keywords

METIS-320142
IR-102804

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title = "EUV-mirror, optical system with EUV-mirror and associated operating method",

abstract = "An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.",

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author = "U. Dinger and Frederik Bijkerk and Muharrem Bayraktar and O. Dier",

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T1 - EUV-mirror, optical system with EUV-mirror and associated operating method

AU - Dinger, U.

AU - Bijkerk, Frederik

AU - Bayraktar, Muharrem

AU - Dier, O.

PY - 2016/12/29

Y1 - 2016/12/29

N2 - An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.

AB - An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.

KW - METIS-320142

KW - IR-102804

M3 - Patent

M1 - US201615262272 20160912

ER -

EUV-mirror, optical system with EUV-mirror and associated operating method

Abstract

Keywords

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