EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation

Viacheslav Medvedev, Andrey Yakshin, Robbert Wilhelmus Elisabeth van de Kruijs, V.M. Krivtsun, S.N. Yakunin, Frederik Bijkerk

Research output: Other contributionOther research output

Abstract

We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation (13.5 nm) which has near-zero reflectance for IR line radiation (10.6 mm). The EUV reflecting part is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allowed integrating the multilayer coating in a Fabry-Perot etalon structure with a high loss factor for 10.6 mm. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the CO2 laser radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45% at 13.5 nm, with a bandwidth at FWHM being 0.284 nm. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.
Original languageEnglish
Place of PublicationMiami, Florida
Publication statusPublished - 2011

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laser beams
mirrors
reflectance
extreme ultraviolet radiation
infrared radiation
photolithography
magnetron sputtering
retarding
bandwidth
coatings
radiation

Keywords

  • METIS-304962

Cite this

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title = "EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation",
abstract = "We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation (13.5 nm) which has near-zero reflectance for IR line radiation (10.6 mm). The EUV reflecting part is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allowed integrating the multilayer coating in a Fabry-Perot etalon structure with a high loss factor for 10.6 mm. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the CO2 laser radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45{\%} at 13.5 nm, with a bandwidth at FWHM being 0.284 nm. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.",
keywords = "METIS-304962",
author = "Viacheslav Medvedev and Andrey Yakshin and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and V.M. Krivtsun and S.N. Yakunin and Frederik Bijkerk",
year = "2011",
language = "English",
type = "Other",

}

EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation. / Medvedev, Viacheslav; Yakshin, Andrey; van de Kruijs, Robbert Wilhelmus Elisabeth; Krivtsun, V.M.; Yakunin, S.N.; Bijkerk, Frederik.

Miami, Florida. 2011, .

Research output: Other contributionOther research output

TY - GEN

T1 - EUV multilayer mirror with suppressed reflectivity for CO2 laser radiation

AU - Medvedev, Viacheslav

AU - Yakshin, Andrey

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Krivtsun, V.M.

AU - Yakunin, S.N.

AU - Bijkerk, Frederik

PY - 2011

Y1 - 2011

N2 - We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation (13.5 nm) which has near-zero reflectance for IR line radiation (10.6 mm). The EUV reflecting part is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allowed integrating the multilayer coating in a Fabry-Perot etalon structure with a high loss factor for 10.6 mm. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the CO2 laser radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45% at 13.5 nm, with a bandwidth at FWHM being 0.284 nm. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.

AB - We have developed a multilayer mirror for extreme ultraviolet (EUV) radiation (13.5 nm) which has near-zero reflectance for IR line radiation (10.6 mm). The EUV reflecting part is based on alternating B4C and Si layers. Substantial transparency of these materials with respect to the infrared radiation allowed integrating the multilayer coating in a Fabry-Perot etalon structure with a high loss factor for 10.6 mm. Samples were manufactured using magnetron sputtering deposition technique and demonstrated suppression of the CO2 laser radiation by up to 3 orders of magnitude. The EUV peak reflectance amounts 45% at 13.5 nm, with a bandwidth at FWHM being 0.284 nm. Therefore such a mirror could replace conventional multilayer mirrors to suppress undesired spectral components in monochromatic imaging applications, including EUV photolithography.

KW - METIS-304962

M3 - Other contribution

CY - Miami, Florida

ER -