EUV spectrum of high power LPP source

Mark van de Kerkhof; Ruud van der Horst; Muharrem Bayraktar; Robbert van de Kruijs; Edgar Osorio; Marcelo Ackermann

doi:10.1117/12.3072173

EUV spectrum of high power LPP source

Mark van de Kerkhof
, Ruud van der Horst
, Muharrem Bayraktar
, Robbert van de Kruijs
, Edgar Osorio
, Marcelo Ackermann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

32 Downloads (Pure)

Abstract

EUV scanners have been adopted worldwide for High-Volume Manufacturing (HVM) of sub-10 nm lithography, utilizing Laser-Produced Plasma (LPP) Sources to generate EUV photons. The output spectrum of the LPP Source is relevant for several aspects of the scanner, such as optimizing reticle stacks and pellicles and for optimizing resist for maximum sensitivity and imaging contrast. Also, the ion fluxes and energies of the scanner plasma will depend on the details of the full UV spectrum. This paper will describe full-UV spectrum measurements from 5 to 400 nm, measured at the output point of an LPP Source, using a proprietary transmission grating spectrometer. Impact of the different spectral regions will be discussed for reticles, pellicles, resist, and scanner plasma. Finally, some options will be described to reduce or filter out unwanted spectral components if desired.

Original language	English
Title of host publication	International Conference on Extreme Ultraviolet Lithography 2025
Editors	Toshiro Itani, Kurt G. Ronse, Patrick P. Naulleau, Paolo A. Gargini
Place of Publication	Washington
Publisher	SPIE
Number of pages	8
ISBN (Electronic)	9781510693197
ISBN (Print)	9781510693180
DOIs	https://doi.org/10.1117/12.3072173
Publication status	Published - 6 Nov 2025
Event	International Conference on Extreme Ultraviolet Lithography, EUVL 2025 - Monterey Conference Center, Monterey, United States Duration: 22 Sept 2025 → 26 Sept 2025

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	13686
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	International Conference on Extreme Ultraviolet Lithography, EUVL 2025
Abbreviated title	EUVL 2025
Country/Territory	United States
City	Monterey
Period	22/09/25 → 26/09/25

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

2026 OA procedure
DUV
EUV
Pellicle
Spectral Purity
Spectrum
Black Border

Access to Document

10.1117/12.3072173

Conference paperFinal published version, 642 KBLicence: Taverne

Cite this

van de Kerkhof, M., van der Horst, R., Bayraktar, M., van de Kruijs, R., Osorio, E., & Ackermann, M. (2025). EUV spectrum of high power LPP source. In T. Itani, K. G. Ronse, P. P. Naulleau, & P. A. Gargini (Eds.), International Conference on Extreme Ultraviolet Lithography 2025 Article 1368611 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13686). SPIE. https://doi.org/10.1117/12.3072173

@inproceedings{e97d8686ed71434ea1abbeb839d25dfb,

title = "EUV spectrum of high power LPP source",

abstract = "EUV scanners have been adopted worldwide for High-Volume Manufacturing (HVM) of sub-10 nm lithography, utilizing Laser-Produced Plasma (LPP) Sources to generate EUV photons. The output spectrum of the LPP Source is relevant for several aspects of the scanner, such as optimizing reticle stacks and pellicles and for optimizing resist for maximum sensitivity and imaging contrast. Also, the ion fluxes and energies of the scanner plasma will depend on the details of the full UV spectrum. This paper will describe full-UV spectrum measurements from 5 to 400 nm, measured at the output point of an LPP Source, using a proprietary transmission grating spectrometer. Impact of the different spectral regions will be discussed for reticles, pellicles, resist, and scanner plasma. Finally, some options will be described to reduce or filter out unwanted spectral components if desired.",

keywords = "2026 OA procedure, DUV, EUV, Pellicle, Spectral Purity, Spectrum, Black Border",

author = "\{van de Kerkhof\}, Mark and \{van der Horst\}, Ruud and Muharrem Bayraktar and \{van de Kruijs\}, Robbert and Edgar Osorio and Marcelo Ackermann",

note = "Publisher Copyright: Copyright {\textcopyright} 2025 Society of Photo-Optical Instrumentation Engineers (SPIE).; International Conference on Extreme Ultraviolet Lithography, EUVL 2025, EUVL 2025 ; Conference date: 22-09-2025 Through 26-09-2025",

year = "2025",

month = nov,

day = "6",

doi = "10.1117/12.3072173",

language = "English",

isbn = "9781510693180",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Toshiro Itani and Ronse, \{Kurt G.\} and Naulleau, \{Patrick P.\} and Gargini, \{Paolo A.\}",

booktitle = "International Conference on Extreme Ultraviolet Lithography 2025",

address = "United States",

}

van de Kerkhof, M, van der Horst, R, Bayraktar, M , van de Kruijs, R, Osorio, E & Ackermann, M 2025, EUV spectrum of high power LPP source. in T Itani, KG Ronse, PP Naulleau & PA Gargini (eds), International Conference on Extreme Ultraviolet Lithography 2025., 1368611, Proceedings of SPIE - The International Society for Optical Engineering, vol. 13686, SPIE, Washington, International Conference on Extreme Ultraviolet Lithography, EUVL 2025, Monterey, California, United States, 22/09/25. https://doi.org/10.1117/12.3072173

EUV spectrum of high power LPP source. / van de Kerkhof, Mark; van der Horst, Ruud; Bayraktar, Muharrem et al.
International Conference on Extreme Ultraviolet Lithography 2025. ed. / Toshiro Itani; Kurt G. Ronse; Patrick P. Naulleau; Paolo A. Gargini. Washington: SPIE, 2025. 1368611 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13686).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - EUV spectrum of high power LPP source

AU - van de Kerkhof, Mark

AU - van der Horst, Ruud

AU - Bayraktar, Muharrem

AU - van de Kruijs, Robbert

AU - Osorio, Edgar

AU - Ackermann, Marcelo

PY - 2025/11/6

Y1 - 2025/11/6

N2 - EUV scanners have been adopted worldwide for High-Volume Manufacturing (HVM) of sub-10 nm lithography, utilizing Laser-Produced Plasma (LPP) Sources to generate EUV photons. The output spectrum of the LPP Source is relevant for several aspects of the scanner, such as optimizing reticle stacks and pellicles and for optimizing resist for maximum sensitivity and imaging contrast. Also, the ion fluxes and energies of the scanner plasma will depend on the details of the full UV spectrum. This paper will describe full-UV spectrum measurements from 5 to 400 nm, measured at the output point of an LPP Source, using a proprietary transmission grating spectrometer. Impact of the different spectral regions will be discussed for reticles, pellicles, resist, and scanner plasma. Finally, some options will be described to reduce or filter out unwanted spectral components if desired.

AB - EUV scanners have been adopted worldwide for High-Volume Manufacturing (HVM) of sub-10 nm lithography, utilizing Laser-Produced Plasma (LPP) Sources to generate EUV photons. The output spectrum of the LPP Source is relevant for several aspects of the scanner, such as optimizing reticle stacks and pellicles and for optimizing resist for maximum sensitivity and imaging contrast. Also, the ion fluxes and energies of the scanner plasma will depend on the details of the full UV spectrum. This paper will describe full-UV spectrum measurements from 5 to 400 nm, measured at the output point of an LPP Source, using a proprietary transmission grating spectrometer. Impact of the different spectral regions will be discussed for reticles, pellicles, resist, and scanner plasma. Finally, some options will be described to reduce or filter out unwanted spectral components if desired.

KW - 2026 OA procedure

KW - DUV

KW - EUV

KW - Pellicle

KW - Spectral Purity

KW - Spectrum

KW - Black Border

UR - https://www.scopus.com/pages/publications/105024935533

U2 - 10.1117/12.3072173

DO - 10.1117/12.3072173

M3 - Conference contribution

AN - SCOPUS:105024935533

SN - 9781510693180

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - International Conference on Extreme Ultraviolet Lithography 2025

A2 - Itani, Toshiro

A2 - Ronse, Kurt G.

A2 - Naulleau, Patrick P.

A2 - Gargini, Paolo A.

PB - SPIE

CY - Washington

T2 - International Conference on Extreme Ultraviolet Lithography, EUVL 2025

Y2 - 22 September 2025 through 26 September 2025

ER -

van de Kerkhof M, van der Horst R, Bayraktar M , van de Kruijs R, Osorio E, Ackermann M. EUV spectrum of high power LPP source. In Itani T, Ronse KG, Naulleau PP, Gargini PA, editors, International Conference on Extreme Ultraviolet Lithography 2025. Washington: SPIE. 2025. 1368611. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.3072173

EUV spectrum of high power LPP source

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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