Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update

S. Russo; V. d'Alessandro; L. La Spina; N. Rinaldi; L. K. Nanver

doi:10.1109/BIPOL.2009.5314135

Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update

S. Russo^*, V. d'Alessandro, L. La Spina, N. Rinaldi, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

14 Citations (Scopus)

Abstract

The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value.

Original language	English
Title of host publication	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
Publisher	IEEE
Pages	95-98
Number of pages	4
ISBN (Print)	9781424448968
DOIs	https://doi.org/10.1109/BIPOL.2009.5314135
Publication status	Published - 1 Jan 2009
Externally published	Yes
Event	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009 - Capri, Italy Duration: 12 Oct 2009 → 14 Oct 2009

Conference

Conference	2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
Abbreviated title	BCTM 2009
Country/Territory	Italy
City	Capri
Period	12/10/09 → 14/10/09

Keywords

Bipolar junction transistors (BJTs)
Electrothermal effects
Heterojunction bipolar transistors (HBTs)
Self-heating
Thermal resistance

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10.1109/BIPOL.2009.5314135

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title = "Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update",

abstract = "The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value.",

keywords = "Bipolar junction transistors (BJTs), Electrothermal effects, Heterojunction bipolar transistors (HBTs), Self-heating, Thermal resistance",

author = "S. Russo and V. d'Alessandro and {La Spina}, L. and N. Rinaldi and Nanver, {L. K.}",

year = "2009",

month = jan,

day = "1",

doi = "10.1109/BIPOL.2009.5314135",

language = "English",

isbn = "9781424448968",

pages = "95--98",

booktitle = "2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009",

publisher = "IEEE",

address = "United States",

note = "2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009, BCTM 2009 ; Conference date: 12-10-2009 Through 14-10-2009",

}

Russo, S, d'Alessandro, V, La Spina, L, Rinaldi, N & Nanver, LK 2009, Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update. in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009., 5314135, IEEE, pp. 95-98, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009, Capri, Italy, 12/10/09. https://doi.org/10.1109/BIPOL.2009.5314135

Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update. / Russo, S.; d'Alessandro, V.; La Spina, L. et al.
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009. IEEE, 2009. p. 95-98 5314135.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements

T2 - 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009

AU - Russo, S.

AU - d'Alessandro, V.

AU - La Spina, L.

AU - Rinaldi, N.

AU - Nanver, L. K.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value.

AB - The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value.

KW - Bipolar junction transistors (BJTs)

KW - Electrothermal effects

KW - Heterojunction bipolar transistors (HBTs)

KW - Self-heating

KW - Thermal resistance

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M3 - Conference contribution

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SP - 95

EP - 98

BT - 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009

PB - IEEE

Y2 - 12 October 2009 through 14 October 2009

ER -

Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update

Abstract

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Keywords

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