Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update

S. Russo*, V. d'Alessandro, L. La Spina, N. Rinaldi, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)

Abstract

The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value.

Original languageEnglish
Title of host publication2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
PublisherIEEE
Pages95-98
Number of pages4
ISBN (Print)9781424448968
DOIs
Publication statusPublished - 1 Jan 2009
Externally publishedYes
Event2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009 - Capri, Italy
Duration: 12 Oct 200914 Oct 2009

Conference

Conference2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009
Abbreviated titleBCTM 2009
CountryItaly
CityCapri
Period12/10/0914/10/09

Keywords

  • Bipolar junction transistors (BJTs)
  • Electrothermal effects
  • Heterojunction bipolar transistors (HBTs)
  • Self-heating
  • Thermal resistance

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