Abstract
The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.
| Original language | English |
|---|---|
| Title of host publication | Extended Abstracts 2008 International Workshop on Junction Technology |
| Subtitle of host publication | IWJT-2008 |
| Editors | Yu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li |
| Publisher | IEEE |
| Pages | 97-100 |
| Number of pages | 4 |
| ISBN (Print) | 9781424417384 |
| DOIs | |
| Publication status | Published - 8 Sep 2008 |
| Externally published | Yes |
| Event | 8th International Workshop on Junction Technology, IWJT 2008 - Shanghai, China Duration: 15 May 2008 → 16 May 2008 Conference number: 8 |
Workshop
| Workshop | 8th International Workshop on Junction Technology, IWJT 2008 |
|---|---|
| Abbreviated title | IWJT |
| Country | China |
| City | Shanghai |
| Period | 15/05/08 → 16/05/08 |
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Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. / Civale, Yann; Lorito, Gianpaolo; Xu, Cuiqin; Nanver, Lis K.; Van Der Toorn, Ramses.
Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008. ed. / Yu-Long Jiang; Xin-Ping Qu; Guo-Ping Ru; Bing-Zong Li. IEEE, 2008. p. 97-100 4540026.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters
AU - Civale, Yann
AU - Lorito, Gianpaolo
AU - Xu, Cuiqin
AU - Nanver, Lis K.
AU - Van Der Toorn, Ramses
PY - 2008/9/8
Y1 - 2008/9/8
N2 - The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.
AB - The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.
U2 - 10.1109/IWJT.2008.4540026
DO - 10.1109/IWJT.2008.4540026
M3 - Conference contribution
SN - 9781424417384
SP - 97
EP - 100
BT - Extended Abstracts 2008 International Workshop on Junction Technology
A2 - Jiang, Yu-Long
A2 - Qu, Xin-Ping
A2 - Ru, Guo-Ping
A2 - Li, Bing-Zong
PB - IEEE
ER -