Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Yann Civale; Gianpaolo Lorito; Cuiqin Xu; Lis K. Nanver; Ramses Van Der Toorn

doi:10.1109/IWJT.2008.4540026

Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Yann Civale^*, Gianpaolo Lorito, Cuiqin Xu, Lis K. Nanver, Ramses Van Der Toorn

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×10⁵-1.2×10⁶ cm/s and 2-3×10 ^-8 s, respectively.

Original language	English
Title of host publication	Extended Abstracts 2008 International Workshop on Junction Technology
Subtitle of host publication	IWJT-2008
Editors	Yu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li
Publisher	IEEE
Pages	97-100
Number of pages	4
ISBN (Print)	9781424417384
DOIs	https://doi.org/10.1109/IWJT.2008.4540026
Publication status	Published - 8 Sept 2008
Externally published	Yes
Event	8th International Workshop on Junction Technology, IWJT 2008 - Shanghai, China Duration: 15 May 2008 → 16 May 2008 Conference number: 8

Workshop

Workshop	8th International Workshop on Junction Technology, IWJT 2008
Abbreviated title	IWJT
Country/Territory	China
City	Shanghai
Period	15/05/08 → 16/05/08

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10.1109/IWJT.2008.4540026

Cite this

Civale, Y., Lorito, G., Xu, C., Nanver, L. K., & Van Der Toorn, R. (2008). Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. In Y.-L. Jiang, X.-P. Qu, G.-P. Ru, & B.-Z. Li (Eds.), Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008 (pp. 97-100). Article 4540026 IEEE. https://doi.org/10.1109/IWJT.2008.4540026

@inproceedings{a44c567e79124a56ad04e7cc57c5369a,

title = "Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters",

abstract = "The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.",

author = "Yann Civale and Gianpaolo Lorito and Cuiqin Xu and Nanver, {Lis K.} and {Van Der Toorn}, Ramses",

year = "2008",

month = sep,

day = "8",

doi = "10.1109/IWJT.2008.4540026",

language = "English",

isbn = "9781424417384",

pages = "97--100",

editor = "Yu-Long Jiang and Xin-Ping Qu and Guo-Ping Ru and Bing-Zong Li",

booktitle = "Extended Abstracts 2008 International Workshop on Junction Technology",

publisher = "IEEE",

address = "United States",

note = "8th International Workshop on Junction Technology, IWJT 2008, IWJT ; Conference date: 15-05-2008 Through 16-05-2008",

}

Civale, Y, Lorito, G, Xu, C, Nanver, LK & Van Der Toorn, R 2008, Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. in Y-L Jiang, X-P Qu, G-P Ru & B-Z Li (eds), Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008., 4540026, IEEE, pp. 97-100, 8th International Workshop on Junction Technology, IWJT 2008, Shanghai, China, 15/05/08. https://doi.org/10.1109/IWJT.2008.4540026

Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. / Civale, Yann; Lorito, Gianpaolo; Xu, Cuiqin et al.
Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008. ed. / Yu-Long Jiang; Xin-Ping Qu; Guo-Ping Ru; Bing-Zong Li. IEEE, 2008. p. 97-100 4540026.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

AU - Civale, Yann

AU - Lorito, Gianpaolo

AU - Xu, Cuiqin

AU - Nanver, Lis K.

AU - Van Der Toorn, Ramses

N1 - Conference code: 8

PY - 2008/9/8

Y1 - 2008/9/8

N2 - The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.

AB - The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.

U2 - 10.1109/IWJT.2008.4540026

DO - 10.1109/IWJT.2008.4540026

M3 - Conference contribution

AN - SCOPUS:50849100432

SN - 9781424417384

SP - 97

EP - 100

BT - Extended Abstracts 2008 International Workshop on Junction Technology

A2 - Jiang, Yu-Long

A2 - Qu, Xin-Ping

A2 - Ru, Guo-Ping

A2 - Li, Bing-Zong

PB - IEEE

T2 - 8th International Workshop on Junction Technology, IWJT 2008

Y2 - 15 May 2008 through 16 May 2008

ER -

Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

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