Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Yann Civale*, Gianpaolo Lorito, Cuiqin Xu, Lis K. Nanver, Ramses Van Der Toorn

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.

Original languageEnglish
Title of host publicationExtended Abstracts 2008 International Workshop on Junction Technology
Subtitle of host publicationIWJT-2008
EditorsYu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li
PublisherIEEE
Pages97-100
Number of pages4
ISBN (Print)9781424417384
DOIs
Publication statusPublished - 8 Sep 2008
Externally publishedYes
Event8th International Workshop on Junction Technology, IWJT 2008 - Shanghai, China
Duration: 15 May 200816 May 2008
Conference number: 8

Workshop

Workshop8th International Workshop on Junction Technology, IWJT 2008
Abbreviated titleIWJT
CountryChina
CityShanghai
Period15/05/0816/05/08

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