Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

Yann Civale, Gianpaolo Lorito, Cuiqin Xu, Lis K. Nanver, Ramses Van Der Toorn

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.

Original languageEnglish
Title of host publicationExtended Abstracts 2008 International Workshop on Junction Technology
Subtitle of host publicationIWJT-2008
EditorsYu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li
PublisherIEEE
Pages97-100
Number of pages4
ISBN (Print)9781424417384
DOIs
Publication statusPublished - 8 Sep 2008
Externally publishedYes
Event8th International Workshop on Junction Technology, IWJT 2008 - Shanghai, China
Duration: 15 May 200816 May 2008
Conference number: 8

Workshop

Workshop8th International Workshop on Junction Technology, IWJT 2008
Abbreviated titleIWJT
CountryChina
CityShanghai
Period15/05/0816/05/08

Fingerprint

Carrier lifetime
Heterojunction bipolar transistors
Electric properties
Aluminum
Silicon
Metals

Cite this

Civale, Y., Lorito, G., Xu, C., Nanver, L. K., & Van Der Toorn, R. (2008). Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. In Y-L. Jiang, X-P. Qu, G-P. Ru, & B-Z. Li (Eds.), Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008 (pp. 97-100). [4540026] IEEE. https://doi.org/10.1109/IWJT.2008.4540026
Civale, Yann ; Lorito, Gianpaolo ; Xu, Cuiqin ; Nanver, Lis K. ; Van Der Toorn, Ramses. / Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008. editor / Yu-Long Jiang ; Xin-Ping Qu ; Guo-Ping Ru ; Bing-Zong Li. IEEE, 2008. pp. 97-100
@inproceedings{a44c567e79124a56ad04e7cc57c5369a,
title = "Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters",
abstract = "The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.",
author = "Yann Civale and Gianpaolo Lorito and Cuiqin Xu and Nanver, {Lis K.} and {Van Der Toorn}, Ramses",
year = "2008",
month = "9",
day = "8",
doi = "10.1109/IWJT.2008.4540026",
language = "English",
isbn = "9781424417384",
pages = "97--100",
editor = "Yu-Long Jiang and Xin-Ping Qu and Guo-Ping Ru and Bing-Zong Li",
booktitle = "Extended Abstracts 2008 International Workshop on Junction Technology",
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address = "United States",

}

Civale, Y, Lorito, G, Xu, C, Nanver, LK & Van Der Toorn, R 2008, Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. in Y-L Jiang, X-P Qu, G-P Ru & B-Z Li (eds), Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008., 4540026, IEEE, pp. 97-100, 8th International Workshop on Junction Technology, IWJT 2008, Shanghai, China, 15/05/08. https://doi.org/10.1109/IWJT.2008.4540026

Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. / Civale, Yann; Lorito, Gianpaolo; Xu, Cuiqin; Nanver, Lis K.; Van Der Toorn, Ramses.

Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008. ed. / Yu-Long Jiang; Xin-Ping Qu; Guo-Ping Ru; Bing-Zong Li. IEEE, 2008. p. 97-100 4540026.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

AU - Civale, Yann

AU - Lorito, Gianpaolo

AU - Xu, Cuiqin

AU - Nanver, Lis K.

AU - Van Der Toorn, Ramses

PY - 2008/9/8

Y1 - 2008/9/8

N2 - The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.

AB - The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime τ have been determined to be in the ranges of 7×105-1.2×106 cm/s and 2-3×10 -8 s, respectively.

U2 - 10.1109/IWJT.2008.4540026

DO - 10.1109/IWJT.2008.4540026

M3 - Conference contribution

SN - 9781424417384

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EP - 100

BT - Extended Abstracts 2008 International Workshop on Junction Technology

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A2 - Qu, Xin-Ping

A2 - Ru, Guo-Ping

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Civale Y, Lorito G, Xu C, Nanver LK, Van Der Toorn R. Evaluation of Al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters. In Jiang Y-L, Qu X-P, Ru G-P, Li B-Z, editors, Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008. IEEE. 2008. p. 97-100. 4540026 https://doi.org/10.1109/IWJT.2008.4540026