In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.
- SC-ICF: Integrated Circuit Fabrication
- Nickel silicide (NiSi)
- transmission line model (TLM)
- platinum silicide (PtSi)
- Specific contact resistance