Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

N. Stavitski, Mark J.H. van Dal, Anne Lauwers, Christa Vrancken, Alexeij Y. Kovalgin, Robertus A.M. Wolters

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    In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.
    Original languageUndefined
    Article number10.1109/TED.2008.918658
    Pages (from-to)1170-1176
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Issue numberDTR08-9/5
    Publication statusPublished - 22 Apr 2008


    • SC-ICF: Integrated Circuit Fabrication
    • METIS-251068
    • IR-64868
    • Nickel silicide (NiSi)
    • EWI-13045
    • transmission line model (TLM)
    • platinum silicide (PtSi)
    • silic7ide
    • Specific contact resistance

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