Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

N. Stavitski, Mark J.H. van Dal, Anne Lauwers, Christa Vrancken, Alexeij Y. Kovalgin, Robertus A.M. Wolters

    Research output: Contribution to journalArticleAcademicpeer-review

    17 Citations (Scopus)
    243 Downloads (Pure)

    Abstract

    In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.
    Original languageUndefined
    Article number10.1109/TED.2008.918658
    Pages (from-to)1170-1176
    Number of pages7
    JournalIEEE transactions on electron devices
    Volume55
    Issue numberDTR08-9/5
    DOIs
    Publication statusPublished - 22 Apr 2008

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-251068
    • IR-64868
    • Nickel silicide (NiSi)
    • EWI-13045
    • transmission line model (TLM)
    • platinum silicide (PtSi)
    • silic7ide
    • Specific contact resistance

    Cite this

    @article{7d1de12abc254f0699f28dc4a2e2d3be,
    title = "Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction",
    abstract = "In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.",
    keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-251068, IR-64868, Nickel silicide (NiSi), EWI-13045, transmission line model (TLM), platinum silicide (PtSi), silic7ide, Specific contact resistance",
    author = "N. Stavitski and {van Dal}, {Mark J.H.} and Anne Lauwers and Christa Vrancken and Kovalgin, {Alexeij Y.} and Wolters, {Robertus A.M.}",
    note = "10.1109/TED.2008.918658",
    year = "2008",
    month = "4",
    day = "22",
    doi = "10.1109/TED.2008.918658",
    language = "Undefined",
    volume = "55",
    pages = "1170--1176",
    journal = "IEEE transactions on electron devices",
    issn = "0018-9383",
    publisher = "IEEE",
    number = "DTR08-9/5",

    }

    Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction. / Stavitski, N.; van Dal, Mark J.H.; Lauwers, Anne; Vrancken, Christa; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    In: IEEE transactions on electron devices, Vol. 55, No. DTR08-9/5, 10.1109/TED.2008.918658, 22.04.2008, p. 1170-1176.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

    AU - Stavitski, N.

    AU - van Dal, Mark J.H.

    AU - Lauwers, Anne

    AU - Vrancken, Christa

    AU - Kovalgin, Alexeij Y.

    AU - Wolters, Robertus A.M.

    N1 - 10.1109/TED.2008.918658

    PY - 2008/4/22

    Y1 - 2008/4/22

    N2 - In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.

    AB - In order to measure silicide-to-silicon specific contact resistance �?c, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.

    KW - SC-ICF: Integrated Circuit Fabrication

    KW - METIS-251068

    KW - IR-64868

    KW - Nickel silicide (NiSi)

    KW - EWI-13045

    KW - transmission line model (TLM)

    KW - platinum silicide (PtSi)

    KW - silic7ide

    KW - Specific contact resistance

    U2 - 10.1109/TED.2008.918658

    DO - 10.1109/TED.2008.918658

    M3 - Article

    VL - 55

    SP - 1170

    EP - 1176

    JO - IEEE transactions on electron devices

    JF - IEEE transactions on electron devices

    SN - 0018-9383

    IS - DTR08-9/5

    M1 - 10.1109/TED.2008.918658

    ER -