Evaluation of vacuum bonded GaAs/Si spin-valve transistors

K. Dessein, H. Boeve, P.S. Anil Kumar, J. de Boeck, J.C. Lodder, L. Delaey, G. Borghs

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    9 Citations (Scopus)


    In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%.
    Original languageUndefined
    Pages (from-to)5155-5157
    Number of pages3
    JournalJournal of Applied Physics
    Issue number9
    Publication statusPublished - 2000


    • METIS-112298
    • IR-62948
    • SMI-NE: From 2006 in EWI-NE
    • EWI-5398

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