Evaluation of vacuum bonded GaAs/Si spin-valve transistors

K. Dessein; H. Boeve; P.S. Anil Kumar; J. de Boeck; J.C. Lodder; L. Delaey; G. Borghs

doi:10.1063/1.373280

Evaluation of vacuum bonded GaAs/Si spin-valve transistors

K. Dessein, H. Boeve, P.S. Anil Kumar, J. de Boeck, J.C. Lodder, L. Delaey, G. Borghs

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

Abstract

In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%.

Original language	Undefined
Pages (from-to)	5155-5157
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	9
DOIs	https://doi.org/10.1063/1.373280
Publication status	Published - 2000

Keywords

METIS-112298
IR-62948
SMI-NE: From 2006 in EWI-NE
EWI-5398

Access to Document

10.1063/1.373280

http://eprints.eemcs.utwente.nl/secure2/5398/01/DESSEIN2000.PDF

Cite this

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title = "Evaluation of vacuum bonded GaAs/Si spin-valve transistors",

abstract = "In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%.",

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T1 - Evaluation of vacuum bonded GaAs/Si spin-valve transistors

AU - Dessein, K.

AU - Boeve, H.

AU - Anil Kumar, P.S.

AU - de Boeck, J.

AU - Lodder, J.C.

AU - Delaey, L.

AU - Borghs, G.

N1 - Imported from SMI Reference manager

PY - 2000

Y1 - 2000

N2 - In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%.

AB - In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%.

KW - METIS-112298

KW - IR-62948

KW - SMI-NE: From 2006 in EWI-NE

KW - EWI-5398

U2 - 10.1063/1.373280

DO - 10.1063/1.373280

M3 - Article

VL - 87

SP - 5155

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -