Abstract
In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%.
Original language | Undefined |
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Pages (from-to) | 5155-5157 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 87 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2000 |
Keywords
- METIS-112298
- IR-62948
- SMI-NE: From 2006 in EWI-NE
- EWI-5398