Evidence of stress anisotropy and role of oxygen pressure in growth of pulsed-laser-deposited hexaferrite films

A. Lisfi, J.C. Lodder, Enrico G. Keim, C.M. Williams

    Research output: Contribution to journalArticleAcademicpeer-review

    38 Citations (Scopus)

    Abstract

    BaFe12O19 films have been grown by pulsed laser deposition (PLD) on (001) sapphire using two different conditions with and without oxygen. Layers grown in O2 atmosphere exhibit an epitaxial structure stressed at the interface with a perpendicular easy axis whereas magnetic anisotropy is randomly oriented in those deposited without O2 . The random structure is a consequence of the high energy of ions in the PLD plume which damage the smoothness of the substrate at an earlier stage of growth. Oxygen pressure can reduce the energy of arriving atoms and prevent deterioration of the interface sharpness, and lead to epitaxial growth. Stress induces in-plane anisotropy with the coercivity strongly dependent on the temperature (T 0.75 law). An estimate of the stress confirms that it is too low to compete with magnetocrystalline anisotropy.
    Original languageUndefined
    Pages (from-to)76-78
    Number of pages3
    JournalApplied physics letters
    Volume82
    Issue number1
    DOIs
    Publication statusPublished - 2003

    Keywords

    • EWI-5536
    • SMI-TST: From 2006 in EWI-TST
    • IR-62993
    • METIS-208551
    • SMI-MAT: MATERIALS

    Cite this

    @article{93bc2815a92d471dafb1694fa0ff7b03,
    title = "Evidence of stress anisotropy and role of oxygen pressure in growth of pulsed-laser-deposited hexaferrite films",
    abstract = "BaFe12O19 films have been grown by pulsed laser deposition (PLD) on (001) sapphire using two different conditions with and without oxygen. Layers grown in O2 atmosphere exhibit an epitaxial structure stressed at the interface with a perpendicular easy axis whereas magnetic anisotropy is randomly oriented in those deposited without O2 . The random structure is a consequence of the high energy of ions in the PLD plume which damage the smoothness of the substrate at an earlier stage of growth. Oxygen pressure can reduce the energy of arriving atoms and prevent deterioration of the interface sharpness, and lead to epitaxial growth. Stress induces in-plane anisotropy with the coercivity strongly dependent on the temperature (T 0.75 law). An estimate of the stress confirms that it is too low to compete with magnetocrystalline anisotropy.",
    keywords = "EWI-5536, SMI-TST: From 2006 in EWI-TST, IR-62993, METIS-208551, SMI-MAT: MATERIALS",
    author = "A. Lisfi and J.C. Lodder and Keim, {Enrico G.} and C.M. Williams",
    note = "Imported from SMI Reference manager",
    year = "2003",
    doi = "10.1063/1.1533854",
    language = "Undefined",
    volume = "82",
    pages = "76--78",
    journal = "Applied physics letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics",
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    }

    Evidence of stress anisotropy and role of oxygen pressure in growth of pulsed-laser-deposited hexaferrite films. / Lisfi, A.; Lodder, J.C.; Keim, Enrico G.; Williams, C.M.

    In: Applied physics letters, Vol. 82, No. 1, 2003, p. 76-78.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Evidence of stress anisotropy and role of oxygen pressure in growth of pulsed-laser-deposited hexaferrite films

    AU - Lisfi, A.

    AU - Lodder, J.C.

    AU - Keim, Enrico G.

    AU - Williams, C.M.

    N1 - Imported from SMI Reference manager

    PY - 2003

    Y1 - 2003

    N2 - BaFe12O19 films have been grown by pulsed laser deposition (PLD) on (001) sapphire using two different conditions with and without oxygen. Layers grown in O2 atmosphere exhibit an epitaxial structure stressed at the interface with a perpendicular easy axis whereas magnetic anisotropy is randomly oriented in those deposited without O2 . The random structure is a consequence of the high energy of ions in the PLD plume which damage the smoothness of the substrate at an earlier stage of growth. Oxygen pressure can reduce the energy of arriving atoms and prevent deterioration of the interface sharpness, and lead to epitaxial growth. Stress induces in-plane anisotropy with the coercivity strongly dependent on the temperature (T 0.75 law). An estimate of the stress confirms that it is too low to compete with magnetocrystalline anisotropy.

    AB - BaFe12O19 films have been grown by pulsed laser deposition (PLD) on (001) sapphire using two different conditions with and without oxygen. Layers grown in O2 atmosphere exhibit an epitaxial structure stressed at the interface with a perpendicular easy axis whereas magnetic anisotropy is randomly oriented in those deposited without O2 . The random structure is a consequence of the high energy of ions in the PLD plume which damage the smoothness of the substrate at an earlier stage of growth. Oxygen pressure can reduce the energy of arriving atoms and prevent deterioration of the interface sharpness, and lead to epitaxial growth. Stress induces in-plane anisotropy with the coercivity strongly dependent on the temperature (T 0.75 law). An estimate of the stress confirms that it is too low to compete with magnetocrystalline anisotropy.

    KW - EWI-5536

    KW - SMI-TST: From 2006 in EWI-TST

    KW - IR-62993

    KW - METIS-208551

    KW - SMI-MAT: MATERIALS

    U2 - 10.1063/1.1533854

    DO - 10.1063/1.1533854

    M3 - Article

    VL - 82

    SP - 76

    EP - 78

    JO - Applied physics letters

    JF - Applied physics letters

    SN - 0003-6951

    IS - 1

    ER -