We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.
|Conference||International Electron Devices Meeting, IEDM 2007|
|Abbreviated title||IEDM 2007|
|Period||10/12/07 → 12/12/07|