Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D.T. Castro; L. Goux; G.A.M. Hurkx; K. Attenborough; R. Delhounge; J. Lisoni; F.J. Jedema; M.A.A. in ‘t Zandt; R.A.M. Wolters; Dirk J Gravesteijn; M. Verheijen; M. Kaiser; R.G.R. Weemaes

doi:10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D.T. Castro, L. Goux, G.A.M. Hurkx, K. Attenborough, R. Delhounge, J. Lisoni, F.J. Jedema, M.A.A. in ‘t Zandt, R.A.M. Wolters, Dirk J Gravesteijn, M. Verheijen, M. Kaiser, R.G.R. Weemaes

Research output: Contribution to conference › Paper › peer-review

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Abstract

We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

Original language	English
Pages	315-318
Number of pages	4
DOIs	https://doi.org/10.1109/IEDM.2007.4418934
Publication status	Published - 10 Dec 2007
Event	International Electron Devices Meeting, IEDM 2007 - Washington, United States Duration: 10 Dec 2007 → 12 Dec 2007

Conference

Conference	International Electron Devices Meeting, IEDM 2007
Abbreviated title	IEDM 2007
Country/Territory	United States
City	Washington
Period	10/12/07 → 12/12/07

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10.1109/IEDM.2007.4418934

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Castro, D. T., Goux, L., Hurkx, G. A. M., Attenborough, K., Delhounge, R., Lisoni, J., Jedema, F. J., in ‘t Zandt, M. A. A., Wolters, R. A. M., Gravesteijn, D. J., Verheijen, M., Kaiser, M., & Weemaes, R. G. R. (2007). Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. 315-318. Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, District of Columbia, United States. https://doi.org/10.1109/IEDM.2007.4418934

@conference{4bba8ddf065a459c896ef57ba306ff92,

title = "Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells",

abstract = "We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.",

author = "D.T. Castro and L. Goux and G.A.M. Hurkx and K. Attenborough and R. Delhounge and J. Lisoni and F.J. Jedema and {in {\textquoteleft}t Zandt}, M.A.A. and R.A.M. Wolters and Gravesteijn, {Dirk J} and M. Verheijen and M. Kaiser and R.G.R. Weemaes",

year = "2007",

month = dec,

day = "10",

doi = "10.1109/IEDM.2007.4418934",

language = "English",

pages = "315--318",

note = "International Electron Devices Meeting, IEDM 2007, IEDM 2007 ; Conference date: 10-12-2007 Through 12-12-2007",

}

Castro, DT, Goux, L, Hurkx, GAM, Attenborough, K, Delhounge, R, Lisoni, J, Jedema, FJ, in ‘t Zandt, MAA, Wolters, RAM, Gravesteijn, DJ, Verheijen, M, Kaiser, M & Weemaes, RGR 2007, 'Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells', Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, United States, 10/12/07 - 12/12/07 pp. 315-318. https://doi.org/10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. / Castro, D.T.; Goux, L.; Hurkx, G.A.M. et al.
2007. 315-318 Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, District of Columbia, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

AU - Castro, D.T.

AU - Goux, L.

AU - Hurkx, G.A.M.

AU - Attenborough, K.

AU - Delhounge, R.

AU - Lisoni, J.

AU - Jedema, F.J.

AU - in ‘t Zandt, M.A.A.

AU - Wolters, R.A.M.

AU - Gravesteijn, Dirk J

AU - Verheijen, M.

AU - Kaiser, M.

AU - Weemaes, R.G.R.

PY - 2007/12/10

Y1 - 2007/12/10

N2 - We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

AB - We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

U2 - 10.1109/IEDM.2007.4418934

DO - 10.1109/IEDM.2007.4418934

M3 - Paper

SP - 315

EP - 318

T2 - International Electron Devices Meeting, IEDM 2007

Y2 - 10 December 2007 through 12 December 2007

ER -

Castro DT, Goux L, Hurkx GAM, Attenborough K, Delhounge R, Lisoni J et al.. Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. 2007. Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, District of Columbia, United States. doi: 10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

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