Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D.T. Castro, L. Goux, G.A.M. Hurkx, K. Attenborough, R. Delhounge, J. Lisoni, F.J. Jedema, M.A.A. in ‘t Zandt, Robertus A.M. Wolters, D.J. Gravesteijn, Dirk J Gravesteijn, M. Verheijen, M. Kaiser, R.G.R. Weemaes

    Research output: Contribution to conferencePaperAcademicpeer-review

    59 Citations (Scopus)


    We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.
    Original languageUndefined
    Number of pages4
    Publication statusPublished - 10 Dec 2007
    EventInternational Electron Devices Meeting, IEDM 2007 - Washington, United States
    Duration: 10 Dec 200712 Dec 2007


    ConferenceInternational Electron Devices Meeting, IEDM 2007
    Abbreviated titleIEDM 2007
    Country/TerritoryUnited States


    • EWI-20008
    • IR-76694

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