Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D.T. Castro; L. Goux; G.A.M. Hurkx; K. Attenborough; R. Delhounge; J. Lisoni; F.J. Jedema; M.A.A. in ‘t Zandt; Robertus A.M. Wolters; D.J. Gravesteijn; Dirk J Gravesteijn; M. Verheijen; M. Kaiser; R.G.R. Weemaes

doi:10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

D.T. Castro, L. Goux, G.A.M. Hurkx, K. Attenborough, R. Delhounge, J. Lisoni, F.J. Jedema, M.A.A. in ‘t Zandt, Robertus A.M. Wolters, D.J. Gravesteijn, Dirk J Gravesteijn, M. Verheijen, M. Kaiser, R.G.R. Weemaes

Research output: Contribution to conference › Paper › Academic › peer-review

59 Citations (Scopus)

Abstract

We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

Original language	Undefined
Pages	315-318
Number of pages	4
DOIs	https://doi.org/10.1109/IEDM.2007.4418934
Publication status	Published - 10 Dec 2007
Event	International Electron Devices Meeting, IEDM 2007 - Washington, United States Duration: 10 Dec 2007 → 12 Dec 2007

Conference

Conference	International Electron Devices Meeting, IEDM 2007
Abbreviated title	IEDM 2007
Country/Territory	United States
City	Washington
Period	10/12/07 → 12/12/07

Keywords

EWI-20008
IR-76694

Access to Document

10.1109/IEDM.2007.4418934

http://eprints.eemcs.utwente.nl/secure2/20008/01/castro.pdf

Cite this

Castro, D. T., Goux, L., Hurkx, G. A. M., Attenborough, K., Delhounge, R., Lisoni, J., Jedema, F. J., in ‘t Zandt, M. A. A., Wolters, R. A. M., Gravesteijn, D. J., Gravesteijn, D. J., Verheijen, M., Kaiser, M., & Weemaes, R. G. R. (2007). Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. 315-318. Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, District of Columbia, United States. https://doi.org/10.1109/IEDM.2007.4418934

Castro, D.T. ; Goux, L. ; Hurkx, G.A.M. ; Attenborough, K. ; Delhounge, R. ; Lisoni, J. ; Jedema, F.J. ; in ‘t Zandt, M.A.A. ; Wolters, Robertus A.M. ; Gravesteijn, D.J. ; Gravesteijn, Dirk J ; Verheijen, M. ; Kaiser, M. ; Weemaes, R.G.R. / Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, District of Columbia, United States.4 p.

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title = "Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells",

abstract = "We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.",

keywords = "EWI-20008, IR-76694",

author = "D.T. Castro and L. Goux and G.A.M. Hurkx and K. Attenborough and R. Delhounge and J. Lisoni and F.J. Jedema and {in {\textquoteleft}t Zandt}, M.A.A. and Wolters, {Robertus A.M.} and D.J. Gravesteijn and Gravesteijn, {Dirk J} and M. Verheijen and M. Kaiser and R.G.R. Weemaes",

year = "2007",

month = dec,

day = "10",

doi = "10.1109/IEDM.2007.4418934",

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note = "null ; Conference date: 10-12-2007 Through 12-12-2007",

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Castro, DT, Goux, L, Hurkx, GAM, Attenborough, K, Delhounge, R, Lisoni, J, Jedema, FJ, in ‘t Zandt, MAA, Wolters, RAM, Gravesteijn, DJ, Gravesteijn, DJ, Verheijen, M, Kaiser, M & Weemaes, RGR 2007, 'Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells', Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, United States, 10/12/07 - 12/12/07 pp. 315-318. https://doi.org/10.1109/IEDM.2007.4418934

Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. / Castro, D.T.; Goux, L.; Hurkx, G.A.M.; Attenborough, K.; Delhounge, R.; Lisoni, J.; Jedema, F.J.; in ‘t Zandt, M.A.A.; Wolters, Robertus A.M.; Gravesteijn, D.J.; Gravesteijn, Dirk J; Verheijen, M.; Kaiser, M.; Weemaes, R.G.R.

2007. 315-318 Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, District of Columbia, United States.

Research output: Contribution to conference › Paper › Academic › peer-review

TY - CONF

T1 - Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells

AU - Castro, D.T.

AU - Goux, L.

AU - Hurkx, G.A.M.

AU - Attenborough, K.

AU - Delhounge, R.

AU - Lisoni, J.

AU - Jedema, F.J.

AU - in ‘t Zandt, M.A.A.

AU - Wolters, Robertus A.M.

AU - Gravesteijn, D.J.

AU - Gravesteijn, Dirk J

AU - Verheijen, M.

AU - Kaiser, M.

AU - Weemaes, R.G.R.

PY - 2007/12/10

Y1 - 2007/12/10

N2 - We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

AB - We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by ~5% and Set voltages by ~28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.

KW - EWI-20008

KW - IR-76694

U2 - 10.1109/IEDM.2007.4418934

DO - 10.1109/IEDM.2007.4418934

M3 - Paper

SP - 315

EP - 318

Y2 - 10 December 2007 through 12 December 2007

ER -

Castro DT, Goux L, Hurkx GAM, Attenborough K, Delhounge R, Lisoni J et al. Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. 2007. Paper presented at International Electron Devices Meeting, IEDM 2007, Washington, District of Columbia, United States. https://doi.org/10.1109/IEDM.2007.4418934