Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth

J. Bosgra, J. Verhoeven, Andrey Yakshin, Frederik Bijkerk

Research output: Contribution to conferencePoster

Abstract

Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.
Original languageUndefined
Pages-
Publication statusPublished - 17 Jan 2012
EventPhysics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands
Duration: 17 Jan 201218 Jan 2012

Conference

ConferencePhysics@FOM Veldhoven 2012
CountryNetherlands
CityVeldhoven
Period17/01/1218/01/12

Keywords

  • METIS-298867

Cite this

Bosgra, J., Verhoeven, J., Yakshin, A., & Bijkerk, F. (2012). Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.