Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.
|Publication status||Published - 17 Jan 2012|
|Event||Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands|
Duration: 17 Jan 2012 → 18 Jan 2012
|Conference||Physics@FOM Veldhoven 2012|
|Period||17/01/12 → 18/01/12|
Bosgra, J., Verhoeven, J., Yakshin, A., & Bijkerk, F. (2012). Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.