Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth

J. Bosgra, J. Verhoeven, Andrey Yakshin, Frederik Bijkerk

Research output: Contribution to conferencePosterOther research output

Abstract

Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.
Original languageUndefined
Pages-
Publication statusPublished - 17 Jan 2012
EventPhysics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands
Duration: 17 Jan 201218 Jan 2012

Conference

ConferencePhysics@FOM Veldhoven 2012
CountryNetherlands
CityVeldhoven
Period17/01/1218/01/12

Keywords

  • METIS-298867

Cite this

Bosgra, J., Verhoeven, J., Yakshin, A., & Bijkerk, F. (2012). Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.
Bosgra, J. ; Verhoeven, J. ; Yakshin, Andrey ; Bijkerk, Frederik. / Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.
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Bosgra, J, Verhoeven, J, Yakshin, A & Bijkerk, F 2012, 'Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth' Physics@FOM Veldhoven 2012, Veldhoven, Netherlands, 17/01/12 - 18/01/12, pp. -.

Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth. / Bosgra, J.; Verhoeven, J.; Yakshin, Andrey; Bijkerk, Frederik.

2012. - Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.

Research output: Contribution to conferencePosterOther research output

TY - CONF

T1 - Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth

AU - Bosgra, J.

AU - Verhoeven, J.

AU - Yakshin, Andrey

AU - Bijkerk, Frederik

PY - 2012/1/17

Y1 - 2012/1/17

N2 - Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.

AB - Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.

KW - METIS-298867

M3 - Poster

SP - -

ER -

Bosgra J, Verhoeven J, Yakshin A, Bijkerk F. Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth. 2012. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.