Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth

J. Bosgra; J. Verhoeven; Andrey Yakshin; Frederik Bijkerk

Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth

J. Bosgra, J. Verhoeven, Andrey Yakshin, Frederik Bijkerk

Research output: Contribution to conference › Poster › Other research output

Abstract

Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.

Original language	Undefined
Pages	-
Publication status	Published - 17 Jan 2012
Event	Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands Duration: 17 Jan 2012 → 18 Jan 2012

Conference

Conference	Physics@FOM Veldhoven 2012
Country/Territory	Netherlands
City	Veldhoven
Period	17/01/12 → 18/01/12

Keywords

METIS-298867

Cite this

@conference{d778fc537e06412ca2bba4342a652800,

title = "Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth",

abstract = "Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.",

keywords = "METIS-298867",

author = "J. Bosgra and J. Verhoeven and Andrey Yakshin and Frederik Bijkerk",

year = "2012",

month = jan,

day = "17",

language = "Undefined",

pages = "--",

note = "null ; Conference date: 17-01-2012 Through 18-01-2012",

}

TY - CONF

T1 - Evolution of diffusion characteristics during nanoscopic Mo-Si interlayer growth

AU - Bosgra, J.

AU - Verhoeven, J.

AU - Yakshin, Andrey

AU - Bijkerk, Frederik

PY - 2012/1/17

Y1 - 2012/1/17

N2 - Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.

AB - Metal/silicon multilayer structures used in microelectronics and optics for soft X-ray region include nano-sized layers. Therefore study of solid state diffusion at the early stages in these structures is the key to understanding their properties. Luckily the multilayer structures, being one-dimensional artificial crystals, appear to be convenient model systems for investigation of diffusion processes. Small angle X-ray diffraction from their interfaces is very sensitive to the smallest changes in the structure. Using X-ray diffraction applied in situ during thermal annealing of Mo/Si structures we investigated diffusion phenomena on picometer length scale and revealed remarkable evolution of diffusion characteristics during the interface growth.

KW - METIS-298867

M3 - Poster

SP - -

Y2 - 17 January 2012 through 18 January 2012

ER -