We compare I‐Vcharacteristics of a semiconducting submicron n + nn + diode as predicted by extended moment equation approximations to those obtained from the solution of the corresponding Boltzmann equation. All lower order models fail in the predominantly ballistic regime. Moreover, the conductance is inadequately predicted by these models, even in nonballistic cases due to the high build‐in electric fields.
Geurts, B. J., Nekovee, M., Boots, H. M. J., & Schuurmans, M. F. H. (1991). Exact and moment equation modelling of electron transport in submicron structures. Applied physics letters, 59(14), 1743-1745. https://doi.org/10.1063/1.106237