Excitation and spin-transport of hot holes in ballistic hole magnetic microscopy

E. Haq; T. Banerjee; M.H. Siekman; J.C. Lodder; R. Jansen

doi:10.1063/1.2212066

Excitation and spin-transport of hot holes in ballistic hole magnetic microscopy

E. Haq
, T. Banerjee
, M.H. Siekman
, J.C. Lodder
, R. Jansen

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

73 Downloads (Pure)

Abstract

A hybrid structure of a ferromagnetic Co/Au/Ni₈₁Fe₁₉ trilayer on p-type silicon is used to probe the excitation of electron-hole pairs in a ferromagnet during inelastic decay of hot electrons and the subsequent spin-dependent transport of the excited holes into the valence band of the p-type Si collector. The hole current is remarkably sensitive to magnetic fields, with a magnetocurrent of up to 250% and, unexpectedly, with a positive sign. We determine effective attenuation lengths and their magnetic field and bias voltage dependence.

Original language	English
Article number	242501
Number of pages	3
Journal	Applied physics letters
Volume	88
Issue number	24
DOIs	https://doi.org/10.1063/1.2212066
Publication status	Published - 12 Jun 2006

Keywords

TSTNE-Probe-STM: Scanning Tunneling Microscope

Access to Document

10.1063/1.2212066

Haq2006excitationFinal published version, 209 KB

Cite this

@article{da3da0f0f06045a7bbb04d04c99fde9e,

title = "Excitation and spin-transport of hot holes in ballistic hole magnetic microscopy",

abstract = "A hybrid structure of a ferromagnetic Co/Au/Ni81Fe19 trilayer on p-type silicon is used to probe the excitation of electron-hole pairs in a ferromagnet during inelastic decay of hot electrons and the subsequent spin-dependent transport of the excited holes into the valence band of the p-type Si collector. The hole current is remarkably sensitive to magnetic fields, with a magnetocurrent of up to 250\% and, unexpectedly, with a positive sign. We determine effective attenuation lengths and their magnetic field and bias voltage dependence.",

keywords = "TSTNE-Probe-STM: Scanning Tunneling Microscope",

author = "E. Haq and T. Banerjee and M.H. Siekman and J.C. Lodder and R. Jansen",

year = "2006",

month = jun,

day = "12",

doi = "10.1063/1.2212066",

language = "English",

volume = "88",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Excitation and spin-transport of hot holes in ballistic hole magnetic microscopy

AU - Haq, E.

AU - Banerjee, T.

AU - Siekman, M.H.

AU - Lodder, J.C.

AU - Jansen, R.

PY - 2006/6/12

Y1 - 2006/6/12

N2 - A hybrid structure of a ferromagnetic Co/Au/Ni81Fe19 trilayer on p-type silicon is used to probe the excitation of electron-hole pairs in a ferromagnet during inelastic decay of hot electrons and the subsequent spin-dependent transport of the excited holes into the valence band of the p-type Si collector. The hole current is remarkably sensitive to magnetic fields, with a magnetocurrent of up to 250% and, unexpectedly, with a positive sign. We determine effective attenuation lengths and their magnetic field and bias voltage dependence.

AB - A hybrid structure of a ferromagnetic Co/Au/Ni81Fe19 trilayer on p-type silicon is used to probe the excitation of electron-hole pairs in a ferromagnet during inelastic decay of hot electrons and the subsequent spin-dependent transport of the excited holes into the valence band of the p-type Si collector. The hole current is remarkably sensitive to magnetic fields, with a magnetocurrent of up to 250% and, unexpectedly, with a positive sign. We determine effective attenuation lengths and their magnetic field and bias voltage dependence.

KW - TSTNE-Probe-STM: Scanning Tunneling Microscope

U2 - 10.1063/1.2212066

DO - 10.1063/1.2212066

M3 - Article

SN - 0003-6951

VL - 88

JO - Applied physics letters

JF - Applied physics letters

IS - 24

M1 - 242501

ER -

Excitation and spin-transport of hot holes in ballistic hole magnetic microscopy

Abstract

Keywords

Access to Document

Fingerprint

Cite this