Excitation and transport of hot holes in a magnetic tunnel transistor

B.G. Park; E. Haq; T. Banerjee; B.C. Min; J.C. Lodder; R. Jansen

doi:10.1063/1.2177202

Excitation and transport of hot holes in a magnetic tunnel transistor

B.G. Park, E. Haq, T. Banerjee, B.C. Min, J.C. Lodder, R. Jansen

Research output: Contribution to journal › Article › Academic › peer-review

27 Citations (Scopus)

36 Downloads (Pure)

Abstract

Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90% is observed at an emitter bias of –0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.

Original language	English
Pages (from-to)	08S703
Number of pages	3
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2177202
Publication status	Published - 2006

Access to Document

10.1063/1.2177202

Park2006excitationFinal published version, 64.9 KB

Cite this

@article{d2dc3d3a64c1425492b8890c9da4445d,

title = "Excitation and transport of hot holes in a magnetic tunnel transistor",

abstract = "Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90% is observed at an emitter bias of –0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.",

author = "B.G. Park and E. Haq and T. Banerjee and B.C. Min and J.C. Lodder and R. Jansen",

year = "2006",

doi = "10.1063/1.2177202",

language = "English",

volume = "99",

pages = "08S703",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Excitation and transport of hot holes in a magnetic tunnel transistor

AU - Park, B.G.

AU - Haq, E.

AU - Banerjee, T.

AU - Min, B.C.

AU - Lodder, J.C.

AU - Jansen, R.

PY - 2006

Y1 - 2006

N2 - Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90% is observed at an emitter bias of –0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.

AB - Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90% is observed at an emitter bias of –0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.

U2 - 10.1063/1.2177202

DO - 10.1063/1.2177202

M3 - Article

SN - 0021-8979

VL - 99

SP - 08S703

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Excitation and transport of hot holes in a magnetic tunnel transistor

Abstract

Access to Document

Fingerprint

Cite this