Excitation and transport of hot holes in a magnetic tunnel transistor

B.G. Park, E. Ul Haq, T. Banerjee, B.C. Min, J.C. Lodder, R. Jansen

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90% is observed at an emitter bias of –0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.
Original languageUndefined
Article number10.1063/1.2177202
Pages (from-to)08S703
Number of pages3
JournalJournal of applied physics
Volume99
Issue number10.1063/1.2177202
DOIs
Publication statusPublished - 2006

Keywords

  • EWI-5230
  • IR-66037
  • METIS-238062

Cite this

Park, B. G., Ul Haq, E., Banerjee, T., Min, B. C., Lodder, J. C., & Jansen, R. (2006). Excitation and transport of hot holes in a magnetic tunnel transistor. Journal of applied physics, 99(10.1063/1.2177202), 08S703. [10.1063/1.2177202]. https://doi.org/10.1063/1.2177202
Park, B.G. ; Ul Haq, E. ; Banerjee, T. ; Min, B.C. ; Lodder, J.C. ; Jansen, R. / Excitation and transport of hot holes in a magnetic tunnel transistor. In: Journal of applied physics. 2006 ; Vol. 99, No. 10.1063/1.2177202. pp. 08S703.
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abstract = "Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90{\%} is observed at an emitter bias of –0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.",
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Park, BG, Ul Haq, E, Banerjee, T, Min, BC, Lodder, JC & Jansen, R 2006, 'Excitation and transport of hot holes in a magnetic tunnel transistor' Journal of applied physics, vol. 99, no. 10.1063/1.2177202, 10.1063/1.2177202, pp. 08S703. https://doi.org/10.1063/1.2177202

Excitation and transport of hot holes in a magnetic tunnel transistor. / Park, B.G.; Ul Haq, E.; Banerjee, T.; Min, B.C.; Lodder, J.C.; Jansen, R.

In: Journal of applied physics, Vol. 99, No. 10.1063/1.2177202, 10.1063/1.2177202, 2006, p. 08S703.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Excitation and transport of hot holes in a magnetic tunnel transistor

AU - Park, B.G.

AU - Ul Haq, E.

AU - Banerjee, T.

AU - Min, B.C.

AU - Lodder, J.C.

AU - Jansen, R.

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AB - Spin-dependent transport of nonequilibrium holes has been investigated using a magnetic tunnel transistor in which a magnetic tunnel junction is combined with a p-type semiconductor. The device can be used for direct hole injection and collection, or in reverse mode in which holes are created by inelastic decay of injected hot electrons via electron-hole pair generation. In the latter case, the collected hole current is larger, and a magnetocurrent (MC) of 90% is observed at an emitter bias of –0.8 V. This positive and large MC indicates that hot holes generated by hot electrons of majority spin contribute mostly to the collector current.

KW - EWI-5230

KW - IR-66037

KW - METIS-238062

U2 - 10.1063/1.2177202

DO - 10.1063/1.2177202

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Park BG, Ul Haq E, Banerjee T, Min BC, Lodder JC, Jansen R. Excitation and transport of hot holes in a magnetic tunnel transistor. Journal of applied physics. 2006;99(10.1063/1.2177202):08S703. 10.1063/1.2177202. https://doi.org/10.1063/1.2177202