Experimental assessment of self-heating in SOI FinFETs

A.J. Scholten, G.D.J. Smit, R.M.T. Pijper, L.F. Tiemijer, H.P. Tuinhout, J.-L.P.J. van der Steen, A. Mercha, M. Braccioli, D.B.M. Klaassen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    46 Citations (Scopus)
    173 Downloads (Pure)

    Abstract

    In this paper, it is shown that self-heating causes a gigantic effect on the capacitances of MOSFETs/FinFETs. The effect is used to determine the SOI FinFET thermal impedance and to determine the temperature rise during FinFET operation
    Original languageEnglish
    Title of host publication 2009 IEEE International Electron Devices Meeting (IEDM)
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society Press
    Pages305-308
    Number of pages4
    ISBN (Electronic)978-1-4244-5641-3, 978-1-4244-5640-6
    ISBN (Print)978-1-4244-5639-0
    DOIs
    Publication statusPublished - 5 Dec 2009
    EventIEEE International Electron Device Meeting, IEDM - Baltimore, MD, USA
    Duration: 7 Dec 20099 Dec 2009

    Publication series

    NameIEEE International Electron Devices Meeting (IEDM)
    PublisherIEEE
    Volume2009
    ISSN (Print)0163-1918
    ISSN (Electronic)2156-017X

    Conference

    ConferenceIEEE International Electron Device Meeting, IEDM
    Period7/12/099/12/09
    Other7-9 Dec. 2009

    Keywords

    • SC-DPM: Device Physics and Modeling

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