Experimental assessment of self-heating in SOI FinFETs

A.J. Scholten, G.D.J. Smit, R.M.T. Pijper, L.F. Tiemijer, H.P. Tuinhout, J.-L.P.J. van der Steen, A. Mercha, M. Braccioli, D.B.M. Klaassen

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    Abstract

    In this paper, it is shown that self-heating causes a gigantic effect on the capacitances of MOSFETs/FinFETs. The effect is used to determine the SOI FinFET thermal impedance and to determine the temperature rise during FinFET operation
    Original languageEnglish
    Title of host publication 2009 IEEE International Electron Devices Meeting (IEDM)
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society Press
    Pages305-308
    Number of pages4
    ISBN (Electronic)978-1-4244-5641-3, 978-1-4244-5640-6
    ISBN (Print)978-1-4244-5639-0
    DOIs
    Publication statusPublished - 5 Dec 2009

    Publication series

    NameIEEE International Electron Devices Meeting (IEDM)
    PublisherIEEE
    Volume2009
    ISSN (Print)0163-1918
    ISSN (Electronic)2156-017X

    Keywords

    • SC-DPM: Device Physics and Modeling

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  • Cite this

    Scholten, A. J., Smit, G. D. J., Pijper, R. M. T., Tiemijer, L. F., Tuinhout, H. P., van der Steen, J-LPJ., ... Klaassen, D. B. M. (2009). Experimental assessment of self-heating in SOI FinFETs. In 2009 IEEE International Electron Devices Meeting (IEDM) (pp. 305-308). (IEEE International Electron Devices Meeting (IEDM); Vol. 2009 ). Piscataway, NJ: IEEE Computer Society Press. https://doi.org/10.1109/IEDM.2009.5424362