### Abstract

Original language | Undefined |
---|---|

Pages (from-to) | 235-239 |

Journal | Optics communications |

Volume | 34 |

Issue number | 2 |

DOIs | |

Publication status | Published - 1980 |

### Keywords

- IR-68693

### Cite this

*Optics communications*,

*34*(2), 235-239. https://doi.org/10.1016/0030-4018(80)90023-1

}

*Optics communications*, vol. 34, no. 2, pp. 235-239. https://doi.org/10.1016/0030-4018(80)90023-1

**Experimental determination of the electron-avalanche and the electron-ion recombination coefficient.** / Ernst, G.J.; Boer, A.G.

Research output: Contribution to journal › Article › Academic

TY - JOUR

T1 - Experimental determination of the electron-avalanche and the electron-ion recombination coefficient

AU - Ernst, G.J.

AU - Boer, A.G.

PY - 1980

Y1 - 1980

N2 - The electron-ion recombination coefficient γ and the avalanche coefficient δ = (α − a) · vd, where α and a are the ionizat ion and attachment coefficients respectively and vd the drift velocity of the electrons, have been experimentally determined in a self-sustained CO2-laser system (1:1:3 mixture) as a function of the E/N value. For low voltages we found the expected decrease of the recombination coefficient for increasing E/N values. However, it appears that for larger voltage the recombination coefficient increases sharply for increasing E/N values. The measurements of δ show a much smaller value than expected from theoretical calculations. This must be explained by a lower value of the electron-energy distribution function for higher energies, which may be consistent with our measured high recombination probability for electrons having high energy.

AB - The electron-ion recombination coefficient γ and the avalanche coefficient δ = (α − a) · vd, where α and a are the ionizat ion and attachment coefficients respectively and vd the drift velocity of the electrons, have been experimentally determined in a self-sustained CO2-laser system (1:1:3 mixture) as a function of the E/N value. For low voltages we found the expected decrease of the recombination coefficient for increasing E/N values. However, it appears that for larger voltage the recombination coefficient increases sharply for increasing E/N values. The measurements of δ show a much smaller value than expected from theoretical calculations. This must be explained by a lower value of the electron-energy distribution function for higher energies, which may be consistent with our measured high recombination probability for electrons having high energy.

KW - IR-68693

U2 - 10.1016/0030-4018(80)90023-1

DO - 10.1016/0030-4018(80)90023-1

M3 - Article

VL - 34

SP - 235

EP - 239

JO - Optics communications

JF - Optics communications

SN - 0030-4018

IS - 2

ER -