Experimental determination of the electron-avalanche and the electron-ion recombination coefficient

G.J. Ernst, A.G. Boer

Research output: Contribution to journalArticleAcademic

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Abstract

The electron-ion recombination coefficient γ and the avalanche coefficient δ = (α − a) · vd, where α and a are the ionizat ion and attachment coefficients respectively and vd the drift velocity of the electrons, have been experimentally determined in a self-sustained CO2-laser system (1:1:3 mixture) as a function of the E/N value. For low voltages we found the expected decrease of the recombination coefficient for increasing E/N values. However, it appears that for larger voltage the recombination coefficient increases sharply for increasing E/N values. The measurements of δ show a much smaller value than expected from theoretical calculations. This must be explained by a lower value of the electron-energy distribution function for higher energies, which may be consistent with our measured high recombination probability for electrons having high energy.
Original languageUndefined
Pages (from-to)235-239
JournalOptics communications
Volume34
Issue number2
DOIs
Publication statusPublished - 1980

Keywords

  • IR-68693

Cite this

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title = "Experimental determination of the electron-avalanche and the electron-ion recombination coefficient",
abstract = "The electron-ion recombination coefficient γ and the avalanche coefficient δ = (α − a) · vd, where α and a are the ionizat ion and attachment coefficients respectively and vd the drift velocity of the electrons, have been experimentally determined in a self-sustained CO2-laser system (1:1:3 mixture) as a function of the E/N value. For low voltages we found the expected decrease of the recombination coefficient for increasing E/N values. However, it appears that for larger voltage the recombination coefficient increases sharply for increasing E/N values. The measurements of δ show a much smaller value than expected from theoretical calculations. This must be explained by a lower value of the electron-energy distribution function for higher energies, which may be consistent with our measured high recombination probability for electrons having high energy.",
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author = "G.J. Ernst and A.G. Boer",
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doi = "10.1016/0030-4018(80)90023-1",
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Experimental determination of the electron-avalanche and the electron-ion recombination coefficient. / Ernst, G.J.; Boer, A.G.

In: Optics communications, Vol. 34, No. 2, 1980, p. 235-239.

Research output: Contribution to journalArticleAcademic

TY - JOUR

T1 - Experimental determination of the electron-avalanche and the electron-ion recombination coefficient

AU - Ernst, G.J.

AU - Boer, A.G.

PY - 1980

Y1 - 1980

N2 - The electron-ion recombination coefficient γ and the avalanche coefficient δ = (α − a) · vd, where α and a are the ionizat ion and attachment coefficients respectively and vd the drift velocity of the electrons, have been experimentally determined in a self-sustained CO2-laser system (1:1:3 mixture) as a function of the E/N value. For low voltages we found the expected decrease of the recombination coefficient for increasing E/N values. However, it appears that for larger voltage the recombination coefficient increases sharply for increasing E/N values. The measurements of δ show a much smaller value than expected from theoretical calculations. This must be explained by a lower value of the electron-energy distribution function for higher energies, which may be consistent with our measured high recombination probability for electrons having high energy.

AB - The electron-ion recombination coefficient γ and the avalanche coefficient δ = (α − a) · vd, where α and a are the ionizat ion and attachment coefficients respectively and vd the drift velocity of the electrons, have been experimentally determined in a self-sustained CO2-laser system (1:1:3 mixture) as a function of the E/N value. For low voltages we found the expected decrease of the recombination coefficient for increasing E/N values. However, it appears that for larger voltage the recombination coefficient increases sharply for increasing E/N values. The measurements of δ show a much smaller value than expected from theoretical calculations. This must be explained by a lower value of the electron-energy distribution function for higher energies, which may be consistent with our measured high recombination probability for electrons having high energy.

KW - IR-68693

U2 - 10.1016/0030-4018(80)90023-1

DO - 10.1016/0030-4018(80)90023-1

M3 - Article

VL - 34

SP - 235

EP - 239

JO - Optics communications

JF - Optics communications

SN - 0030-4018

IS - 2

ER -