Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films

Minh D. Nguyen; Chi T.Q. Nguyen; Hung N. Vu; Guus Rijnders

doi:10.1016/j.cap.2019.06.005

Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films

Minh D. Nguyen^*, Chi T.Q. Nguyen, Hung N. Vu, Guus Rijnders

^*Corresponding author for this work

Inorganic Materials Science

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Normal-ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) and relaxor-ferroelectric Pb_0.9La_0.1(Zr_0.52Ti_0.48)O₃ (PLZT) thin-films are deposited on SrRuO₃-covered SrTiO₃/Si substrates. An ultrahigh recoverable energy-storage density (U_reco) of 68.2 J/cm³ and energy efficiency (η) of 80.4% are achieved in the PLZT thin-films under a large breakdown strength (E_BD) of 3600 kV/cm. These values are much lower in the PZT thin-films (U_reco of 10.3 J/cm³ and η of 62.4% at E_BD of 1000 kV/cm). In addition, the remanent polarization (P_r) and dielectric-constant are also investigated to evaluate the breakdown strength in thin-films. Polar nano-regions (PNRs) are created in the PLZT thin-films to enable relaxor behavior and lead to slim polarization loops along with very small P_r. The excellent operating temperature of energy-storage performance and also the breakdown strength obtained in the PLZT thin-films are mainly ascribed to the presence of PNRs. Moreover, both PZT and PLZT thin-films exhibit superior performance up to 10¹⁰ times of charge-discharge cycling.

Original language	English
Pages (from-to)	1040-1045
Number of pages	6
Journal	Current Applied Physics
Volume	19
Issue number	9
DOIs	https://doi.org/10.1016/j.cap.2019.06.005
Publication status	Published - 1 Sept 2019

Keywords

Breakdown strength
Energy efficiency
Energy-storage density
Polar nano-regions
Relaxor ferroelectric
22/4 OA procedure

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10.1016/j.cap.2019.06.005

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title = "Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films",

abstract = "Normal-ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) and relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin-films are deposited on SrRuO3-covered SrTiO3/Si substrates. An ultrahigh recoverable energy-storage density (Ureco) of 68.2 J/cm3 and energy efficiency (η) of 80.4% are achieved in the PLZT thin-films under a large breakdown strength (EBD) of 3600 kV/cm. These values are much lower in the PZT thin-films (Ureco of 10.3 J/cm3 and η of 62.4% at EBD of 1000 kV/cm). In addition, the remanent polarization (Pr) and dielectric-constant are also investigated to evaluate the breakdown strength in thin-films. Polar nano-regions (PNRs) are created in the PLZT thin-films to enable relaxor behavior and lead to slim polarization loops along with very small Pr. The excellent operating temperature of energy-storage performance and also the breakdown strength obtained in the PLZT thin-films are mainly ascribed to the presence of PNRs. Moreover, both PZT and PLZT thin-films exhibit superior performance up to 1010 times of charge-discharge cycling.",

keywords = "Breakdown strength, Energy efficiency, Energy-storage density, Polar nano-regions, Relaxor ferroelectric, 22/4 OA procedure",

author = "Nguyen, {Minh D.} and Nguyen, {Chi T.Q.} and Vu, {Hung N.} and Guus Rijnders",

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AU - Nguyen, Minh D.

AU - Nguyen, Chi T.Q.

AU - Vu, Hung N.

AU - Rijnders, Guus

PY - 2019/9/1

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AB - Normal-ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) and relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin-films are deposited on SrRuO3-covered SrTiO3/Si substrates. An ultrahigh recoverable energy-storage density (Ureco) of 68.2 J/cm3 and energy efficiency (η) of 80.4% are achieved in the PLZT thin-films under a large breakdown strength (EBD) of 3600 kV/cm. These values are much lower in the PZT thin-films (Ureco of 10.3 J/cm3 and η of 62.4% at EBD of 1000 kV/cm). In addition, the remanent polarization (Pr) and dielectric-constant are also investigated to evaluate the breakdown strength in thin-films. Polar nano-regions (PNRs) are created in the PLZT thin-films to enable relaxor behavior and lead to slim polarization loops along with very small Pr. The excellent operating temperature of energy-storage performance and also the breakdown strength obtained in the PLZT thin-films are mainly ascribed to the presence of PNRs. Moreover, both PZT and PLZT thin-films exhibit superior performance up to 1010 times of charge-discharge cycling.

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KW - Energy efficiency

KW - Energy-storage density

KW - Polar nano-regions

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KW - 22/4 OA procedure

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Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films

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