Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films

Minh D. Nguyen, Chi T.Q. Nguyen, Hung N. Vu, Guus Rijnders

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Normal-ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) and relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin-films are deposited on SrRuO3-covered SrTiO3/Si substrates. An ultrahigh recoverable energy-storage density (Ureco) of 68.2 J/cm3 and energy efficiency (η) of 80.4% are achieved in the PLZT thin-films under a large breakdown strength (EBD) of 3600 kV/cm. These values are much lower in the PZT thin-films (Ureco of 10.3 J/cm3 and η of 62.4% at EBD of 1000 kV/cm). In addition, the remanent polarization (Pr) and dielectric-constant are also investigated to evaluate the breakdown strength in thin-films. Polar nano-regions (PNRs) are created in the PLZT thin-films to enable relaxor behavior and lead to slim polarization loops along with very small Pr. The excellent operating temperature of energy-storage performance and also the breakdown strength obtained in the PLZT thin-films are mainly ascribed to the presence of PNRs. Moreover, both PZT and PLZT thin-films exhibit superior performance up to 1010 times of charge-discharge cycling.

Original languageEnglish
Pages (from-to)1040-1045
Number of pages6
JournalCurrent Applied Physics
Volume19
Issue number9
DOIs
Publication statusPublished - 1 Sep 2019

Fingerprint

Ferroelectric films
energy storage
Energy storage
Ferroelectric materials
breakdown
Thin films
thin films
polarization
Polarization
Remanence
operating temperature
Energy efficiency
Permittivity
permittivity
cycles
Substrates

Keywords

  • Breakdown strength
  • Energy efficiency
  • Energy-storage density
  • Polar nano-regions
  • Relaxor ferroelectric

Cite this

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title = "Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films",
abstract = "Normal-ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) and relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin-films are deposited on SrRuO3-covered SrTiO3/Si substrates. An ultrahigh recoverable energy-storage density (Ureco) of 68.2 J/cm3 and energy efficiency (η) of 80.4{\%} are achieved in the PLZT thin-films under a large breakdown strength (EBD) of 3600 kV/cm. These values are much lower in the PZT thin-films (Ureco of 10.3 J/cm3 and η of 62.4{\%} at EBD of 1000 kV/cm). In addition, the remanent polarization (Pr) and dielectric-constant are also investigated to evaluate the breakdown strength in thin-films. Polar nano-regions (PNRs) are created in the PLZT thin-films to enable relaxor behavior and lead to slim polarization loops along with very small Pr. The excellent operating temperature of energy-storage performance and also the breakdown strength obtained in the PLZT thin-films are mainly ascribed to the presence of PNRs. Moreover, both PZT and PLZT thin-films exhibit superior performance up to 1010 times of charge-discharge cycling.",
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Experimental evidence of breakdown strength and its effect on energy-storage performance in normal and relaxor ferroelectric films. / Nguyen, Minh D.; Nguyen, Chi T.Q.; Vu, Hung N.; Rijnders, Guus.

In: Current Applied Physics, Vol. 19, No. 9, 01.09.2019, p. 1040-1045.

Research output: Contribution to journalArticleAcademicpeer-review

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