Experimental validation of model for pulsed laser-induced subsurface modifications in Si

P.C. Verburg, Gerardus Richardus, Bernardus, Engelina Römer, G.M.H. Knippels, J. Betz, Bert Huis in 't Veld

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

35 Downloads (Pure)

Abstract

Wafers are traditionally diced with diamond saw blades. Saw dicing technology has a number of limitations, especially concerning the dicing of thin wafers. Moreover, the use of fluids and the gen-eration of debris can damage fragile components such as micro electro-mechanical systems. Laser ablation dicing is better suited for thin wafers, but is also not a clean process. An alternative dicing method is subsurface laser dicing. This technology is based on the production of laser-induced sub-surface modifications inside the wafer. These modifications weaken the material, such that the wafer separates along the planes with laser modifications when applying an external force. To find the right laser conditions to produce subsurface modifications in silicon, and to enhance the understand-ing of the underlying physics, a numerical model has previously been developed. To validate this model, the current work compares simulation results with experimental data obtained by focusing nano- and picosecond pulses inside silicon wafers. A fairly good agreement between experimental and numerical results was obtained
Original languageUndefined
Title of host publicationProceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication
Place of PublicationWashington, USA
PublisherJLMN
Pages-
Number of pages5
Publication statusPublished - 11 Jun 2012
Event13th International Symposium on Laser Precision Microfabrication, LPM 2012 - Washington, United States
Duration: 11 Jun 201214 Jun 2012
Conference number: 12

Publication series

Name
PublisherJLMN

Conference

Conference13th International Symposium on Laser Precision Microfabrication, LPM 2012
Abbreviated titleLPM
CountryUnited States
CityWashington
Period11/06/1214/06/12

Keywords

  • METIS-286925
  • IR-80943

Cite this

Verburg, P. C., Römer, G. R. B. E., Knippels, G. M. H., Betz, J., & Huis in 't Veld, B. (2012). Experimental validation of model for pulsed laser-induced subsurface modifications in Si. In Proceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication (pp. -). Washington, USA: JLMN.
Verburg, P.C. ; Römer, Gerardus Richardus, Bernardus, Engelina ; Knippels, G.M.H. ; Betz, J. ; Huis in 't Veld, Bert. / Experimental validation of model for pulsed laser-induced subsurface modifications in Si. Proceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication. Washington, USA : JLMN, 2012. pp. -
@inproceedings{dfb36b49dff6445995af56b83a363016,
title = "Experimental validation of model for pulsed laser-induced subsurface modifications in Si",
abstract = "Wafers are traditionally diced with diamond saw blades. Saw dicing technology has a number of limitations, especially concerning the dicing of thin wafers. Moreover, the use of fluids and the gen-eration of debris can damage fragile components such as micro electro-mechanical systems. Laser ablation dicing is better suited for thin wafers, but is also not a clean process. An alternative dicing method is subsurface laser dicing. This technology is based on the production of laser-induced sub-surface modifications inside the wafer. These modifications weaken the material, such that the wafer separates along the planes with laser modifications when applying an external force. To find the right laser conditions to produce subsurface modifications in silicon, and to enhance the understand-ing of the underlying physics, a numerical model has previously been developed. To validate this model, the current work compares simulation results with experimental data obtained by focusing nano- and picosecond pulses inside silicon wafers. A fairly good agreement between experimental and numerical results was obtained",
keywords = "METIS-286925, IR-80943",
author = "P.C. Verburg and R{\"o}mer, {Gerardus Richardus, Bernardus, Engelina} and G.M.H. Knippels and J. Betz and {Huis in 't Veld}, Bert",
note = "Metis ID: 286925",
year = "2012",
month = "6",
day = "11",
language = "Undefined",
publisher = "JLMN",
pages = "--",
booktitle = "Proceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication",

}

Verburg, PC, Römer, GRBE, Knippels, GMH, Betz, J & Huis in 't Veld, B 2012, Experimental validation of model for pulsed laser-induced subsurface modifications in Si. in Proceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication. JLMN, Washington, USA, pp. -, 13th International Symposium on Laser Precision Microfabrication, LPM 2012, Washington, United States, 11/06/12.

Experimental validation of model for pulsed laser-induced subsurface modifications in Si. / Verburg, P.C.; Römer, Gerardus Richardus, Bernardus, Engelina; Knippels, G.M.H.; Betz, J.; Huis in 't Veld, Bert.

Proceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication. Washington, USA : JLMN, 2012. p. -.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Experimental validation of model for pulsed laser-induced subsurface modifications in Si

AU - Verburg, P.C.

AU - Römer, Gerardus Richardus, Bernardus, Engelina

AU - Knippels, G.M.H.

AU - Betz, J.

AU - Huis in 't Veld, Bert

N1 - Metis ID: 286925

PY - 2012/6/11

Y1 - 2012/6/11

N2 - Wafers are traditionally diced with diamond saw blades. Saw dicing technology has a number of limitations, especially concerning the dicing of thin wafers. Moreover, the use of fluids and the gen-eration of debris can damage fragile components such as micro electro-mechanical systems. Laser ablation dicing is better suited for thin wafers, but is also not a clean process. An alternative dicing method is subsurface laser dicing. This technology is based on the production of laser-induced sub-surface modifications inside the wafer. These modifications weaken the material, such that the wafer separates along the planes with laser modifications when applying an external force. To find the right laser conditions to produce subsurface modifications in silicon, and to enhance the understand-ing of the underlying physics, a numerical model has previously been developed. To validate this model, the current work compares simulation results with experimental data obtained by focusing nano- and picosecond pulses inside silicon wafers. A fairly good agreement between experimental and numerical results was obtained

AB - Wafers are traditionally diced with diamond saw blades. Saw dicing technology has a number of limitations, especially concerning the dicing of thin wafers. Moreover, the use of fluids and the gen-eration of debris can damage fragile components such as micro electro-mechanical systems. Laser ablation dicing is better suited for thin wafers, but is also not a clean process. An alternative dicing method is subsurface laser dicing. This technology is based on the production of laser-induced sub-surface modifications inside the wafer. These modifications weaken the material, such that the wafer separates along the planes with laser modifications when applying an external force. To find the right laser conditions to produce subsurface modifications in silicon, and to enhance the understand-ing of the underlying physics, a numerical model has previously been developed. To validate this model, the current work compares simulation results with experimental data obtained by focusing nano- and picosecond pulses inside silicon wafers. A fairly good agreement between experimental and numerical results was obtained

KW - METIS-286925

KW - IR-80943

M3 - Conference contribution

SP - -

BT - Proceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication

PB - JLMN

CY - Washington, USA

ER -

Verburg PC, Römer GRBE, Knippels GMH, Betz J, Huis in 't Veld B. Experimental validation of model for pulsed laser-induced subsurface modifications in Si. In Proceedings of LPM2012, the 13th International Symposium on Laser Precision Microfabrication. Washington, USA: JLMN. 2012. p. -