Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitride

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    8 Citations (Scopus)

    Abstract

    In this work we explore an uncommon method to extract the piezoelectric coefficient of the piezoelectric material aluminum nitride. The method exploits the bias dependence of CV (capacitance voltage) measurements on M_M (metal-piezoelectric-metal) capacitors. We propose a bias dependent capacitance model for piezoelectric capacitors such as BAW (Bulk Acoustic Wave) resonators. With this model we extract both the piezoelectric coefficient and dielectric constant from the CV recording. In contrast to earlier reports we verified that our results do not depend on layer thickness, biasing and sweep direction of the CV recording. In addition, we discuss the accuracy of our measurements in depth.
    Original languageUndefined
    Title of host publication24th International Conference on Microelectronic Test Structures, ICMTS 2011
    Place of PublicationUSA
    PublisherIEEE Electron Devices Society
    Pages69-73
    Number of pages5
    ISBN (Print)978-1-4244-8527-7
    DOIs
    Publication statusPublished - 4 Apr 2011
    Event24th International Conference on Microelectronic Test Structures, ICMTS 2011 - Amsterdam, Netherlands
    Duration: 4 Apr 20117 Apr 2011
    Conference number: 24
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog11.pdf

    Publication series

    Name
    PublisherIEEE Electron Devices Society
    ISSN (Print)1071-9032

    Conference

    Conference24th International Conference on Microelectronic Test Structures, ICMTS 2011
    Abbreviated titleICMTS
    CountryNetherlands
    CityAmsterdam
    Period4/04/117/04/11
    Internet address

    Keywords

    • METIS-278718
    • EWI-20199
    • IR-77949

    Cite this

    van Hemert, T., Sakriotis, D., Hueting, R. J. E., & Schmitz, J. (2011). Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitride. In 24th International Conference on Microelectronic Test Structures, ICMTS 2011 (pp. 69-73). USA: IEEE Electron Devices Society. https://doi.org/10.1109/ICMTS.2011.5976862