TY - JOUR
T1 - Exploring co-sputtering of ZnO:Al and SiO 2 for efficient electron-selective contacts on silicon solar cells
AU - Zhong, Sihua
AU - Morales-Masis, Monica
AU - Mews, Mathias
AU - Korte, Lars
AU - Jeangros, Quentin
AU - Wu, Weiliang
AU - Boccard, Mathieu
AU - Ballif, Christophe
N1 - Elsevier deal
PY - 2019/6/1
Y1 - 2019/6/1
N2 -
In recent years, considerable efforts have been devoted to developing novel electron-selective materials for crystalline Si (c-Si) solar cells with the attempts to simplify the fabrication process and improve efficiency. In this study, ZnO:Al (AZO) is co-sputtered with SiO
2
to form AZO:SiO
2
films with different SiO
2
content. These nanometer-scale films, deposited on top of thin intrinsic hydrogenated amorphous silicon films and capped with low-work-function metal (such as Al and Mg), are demonstrated to function effectively as electron-selective contacts in c-Si solar cells. On the one hand, AZO:SiO
2
plays an important role in such electron-selective contact and its thickness is a critical parameter, with a thickness of 2 nm showing the best performance. On the other hand, at the optimal thickness of AZO:SiO
2
, the open circuit voltage (V
OC
) of the solar cells is found to be relatively insensitive to material properties of AZO:SiO
2
. Whereas, regarding the fill factor (FF), AZO without SiO
2
content exhibits to be the optimal choice. By using AZO/Al as electron-selective contact, we successfully realize a 19.5%-efficient solar cell with V
OC
over 700 mV and FF around 75%, which is the best result among c-Si solar cells using ZnO as electron-selective contact. Also, this work implies that efficient carrier-selective film can be made by magnetron sputtering method.
AB -
In recent years, considerable efforts have been devoted to developing novel electron-selective materials for crystalline Si (c-Si) solar cells with the attempts to simplify the fabrication process and improve efficiency. In this study, ZnO:Al (AZO) is co-sputtered with SiO
2
to form AZO:SiO
2
films with different SiO
2
content. These nanometer-scale films, deposited on top of thin intrinsic hydrogenated amorphous silicon films and capped with low-work-function metal (such as Al and Mg), are demonstrated to function effectively as electron-selective contacts in c-Si solar cells. On the one hand, AZO:SiO
2
plays an important role in such electron-selective contact and its thickness is a critical parameter, with a thickness of 2 nm showing the best performance. On the other hand, at the optimal thickness of AZO:SiO
2
, the open circuit voltage (V
OC
) of the solar cells is found to be relatively insensitive to material properties of AZO:SiO
2
. Whereas, regarding the fill factor (FF), AZO without SiO
2
content exhibits to be the optimal choice. By using AZO/Al as electron-selective contact, we successfully realize a 19.5%-efficient solar cell with V
OC
over 700 mV and FF around 75%, which is the best result among c-Si solar cells using ZnO as electron-selective contact. Also, this work implies that efficient carrier-selective film can be made by magnetron sputtering method.
KW - UT-Hybrid-D
KW - Co-deposition
KW - c‐Si solar cells
KW - Electron-selective contact
KW - Magnetron sputtering
KW - AZO
KW - 22/4 OA procedure
UR - http://www.scopus.com/inward/record.url?scp=85061342805&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2019.02.005
DO - 10.1016/j.solmat.2019.02.005
M3 - Article
AN - SCOPUS:85061342805
SN - 0927-0248
VL - 194
SP - 67
EP - 73
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -
