Exploring the surface-enhanced Raman scattering (SERS) activity of gold nanostructures embedded around nanogaps at wafer scale: Simulations and experiments

Marta Lafuente*, Pablo Muñoz, Erwin J.W. Berenschot, Roald M. Tiggelaar, Arturo Susarrey-Arce, Sergio G. Rodrigo, Lucas J. Kooijman, Sonia M. García-Blanco, Reyes Mallada, María P. Pina, Niels R. Tas*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
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Abstract

A unique way of converting free space light into a local electromagnetic field in small spaces is via metallic nanostructuring. In this work fabrication, experimental characterization and simulation of surface-enhanced Raman scattering (SERS) active specimens based on Au nanostructures are discussed. We used displacement Talbot lithography (DTL) to fabricate silicon nano-wedge substrates with Au nanostructures embedded around their apices. After the ion beam etching process, a nanogap is introduced between two Au nanostructures templated over nano-wedges, yielding specimens with SERS characteristics. The Au nanostructures and the nanogaps have symmetric and asymmetric configurations with respect to the wedges. With this nanofabrication method, various wafer-scale specimens were fabricated with highly controllable nanogaps with a size in the order of 6 nm for symmetric gaps and 8 nm for asymmetric gaps. SERS characteristics of these specimens were analyzed experimentally by calculating their analytical enhancement factor (AEF). According to finite-difference time-domain (FDTD) simulations, the Raman enhancement arises at the narrow gap due to plasmonic resonances, yielding a maximum AEF of 6.9 × 106. The results highlight the SERS activity of the nanostructures and ultimately comply with reliable substrates for practical applications.
Original languageEnglish
Article number101929
Number of pages12
JournalApplied Materials Today
Volume35
Early online date15 Sept 2023
DOIs
Publication statusPublished - Dec 2023

Keywords

  • Ordered nano-wedges
  • Size-controllable nanogaps
  • FDTD simulations
  • Ordered symmetric and asymmetric
  • nanostructures
  • Ion beam etching (IBE)
  • Gold sputtering
  • UT-Hybrid-D

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