Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology

Y. Fan, J. Mak, A. van Rees, E. J. Klein, K.-J. Boller*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


This paper reports on the properties of wavelength-tunable hybrid diode lasers with extended cavities based on silicon nitride waveguide circuits (Si3N4 in SiO2), the latter chosen for its ideal combination of high index contrast and low propagation loss. It was recently shown that the low loss in this platform allows to extend the optical length of the integrated cavity substantially to about 0.5 m. At the same time low loss enables sharp intracavity spectral filtering by cascading micro-ring resonators (MMRs) with various different roundtrip lengths and high quality factors. With such a hybrid laser, we observed single-frequency oscillation with sub-kHz (290 Hz) intrinsic linewidth, which is the lowest value that has ever been demonstrated with a chip-based diode laser.
Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
Number of pages2
ISBN (Electronic)9781538664865
Publication statusPublished - 30 Oct 2018
Event26th International Semiconductor Laser Conference 2018 - Hilton Santa Fe Historic Plaza, Santa FE, United States
Duration: 16 Sep 201819 Sep 2018
Conference number: 26

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406


Conference26th International Semiconductor Laser Conference 2018
Abbreviated titleISLC 2018
CountryUnited States
CitySanta FE

Fingerprint Dive into the research topics of 'Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology'. Together they form a unique fingerprint.

Cite this