Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology

Y. Fan, J. Mak, A. van Rees, E. J. Klein, K.-J. Boller

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper reports on the properties of wavelength-tunable hybrid diode lasers with extended cavities based on silicon nitride waveguide circuits (Si3N4 in SiO2), the latter chosen for its ideal combination of high index contrast and low propagation loss. It was recently shown that the low loss in this platform allows to extend the optical length of the integrated cavity substantially to about 0.5 m. At the same time low loss enables sharp intracavity spectral filtering by cascading micro-ring resonators (MMRs) with various different roundtrip lengths and high quality factors. With such a hybrid laser, we observed single-frequency oscillation with sub-kHz (290 Hz) intrinsic linewidth, which is the lowest value that has ever been demonstrated with a chip-based diode laser.
Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherIEEE
Pages25-26
Number of pages2
ISBN (Electronic)9781538664865
DOIs
Publication statusPublished - 30 Oct 2018
Event26th International Semiconductor Laser Conference 2018 - Hilton Santa Fe Historic Plaza, Santa FE, United States
Duration: 16 Sep 201819 Sep 2018
Conference number: 26

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Conference

Conference26th International Semiconductor Laser Conference 2018
Abbreviated titleISLC 2018
CountryUnited States
CitySanta FE
Period16/09/1819/09/18

Fingerprint

Semiconductor lasers
semiconductor lasers
filters
cavities
rings
Silicon nitride
silicon nitrides
Linewidth
Q factors
Resonators
Waveguides
platforms
resonators
chips
waveguides
Wavelength
oscillations
propagation
Networks (circuits)
Lasers

Cite this

Fan, Y., Mak, J., van Rees, A., Klein, E. J., & Boller, K-J. (2018). Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 25-26). [8516148] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). IEEE. https://doi.org/10.1109/ISLC.2018.8516148
Fan, Y. ; Mak, J. ; van Rees, A. ; Klein, E. J. ; Boller, K.-J. / Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. 26th International Semiconductor Laser Conference, ISLC 2018. IEEE, 2018. pp. 25-26 (Conference Digest - IEEE International Semiconductor Laser Conference).
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abstract = "This paper reports on the properties of wavelength-tunable hybrid diode lasers with extended cavities based on silicon nitride waveguide circuits (Si3N4 in SiO2), the latter chosen for its ideal combination of high index contrast and low propagation loss. It was recently shown that the low loss in this platform allows to extend the optical length of the integrated cavity substantially to about 0.5 m. At the same time low loss enables sharp intracavity spectral filtering by cascading micro-ring resonators (MMRs) with various different roundtrip lengths and high quality factors. With such a hybrid laser, we observed single-frequency oscillation with sub-kHz (290 Hz) intrinsic linewidth, which is the lowest value that has ever been demonstrated with a chip-based diode laser.",
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Fan, Y, Mak, J, van Rees, A, Klein, EJ & Boller, K-J 2018, Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516148, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, IEEE, pp. 25-26, 26th International Semiconductor Laser Conference 2018 , Santa FE, United States, 16/09/18. https://doi.org/10.1109/ISLC.2018.8516148

Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. / Fan, Y.; Mak, J.; van Rees, A.; Klein, E. J.; Boller, K.-J.

26th International Semiconductor Laser Conference, ISLC 2018. IEEE, 2018. p. 25-26 8516148 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Fan Y, Mak J, van Rees A, Klein EJ, Boller K-J. Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. In 26th International Semiconductor Laser Conference, ISLC 2018. IEEE. 2018. p. 25-26. 8516148. (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2018.8516148