Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology

Y. Fan; J. Mak; A. van Rees; E. J. Klein; K.-J. Boller

doi:10.1109/ISLC.2018.8516148

Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology

Y. Fan
, J. Mak
, A. van Rees
, E. J. Klein
, K.-J. Boller^*

^*Corresponding author for this work

Laser Physics & Nonlinear Optics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

This paper reports on the properties of wavelength-tunable hybrid diode lasers with extended cavities based on silicon nitride waveguide circuits (Si3N4 in SiO2), the latter chosen for its ideal combination of high index contrast and low propagation loss. It was recently shown that the low loss in this platform allows to extend the optical length of the integrated cavity substantially to about 0.5 m. At the same time low loss enables sharp intracavity spectral filtering by cascading micro-ring resonators (MMRs) with various different roundtrip lengths and high quality factors. With such a hybrid laser, we observed single-frequency oscillation with sub-kHz (290 Hz) intrinsic linewidth, which is the lowest value that has ever been demonstrated with a chip-based diode laser.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	IEEE
Pages	25-26
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516148
Publication status	Published - 30 Oct 2018
Event	26th International Semiconductor Laser Conference 2018 - Hilton Santa Fe Historic Plaza, Santa FE, United States Duration: 16 Sept 2018 → 19 Sept 2018 Conference number: 26

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Conference

Conference	26th International Semiconductor Laser Conference 2018
Abbreviated title	ISLC 2018
Country/Territory	United States
City	Santa FE
Period	16/09/18 → 19/09/18

Access to Document

10.1109/ISLC.2018.8516148

Cite this

Fan, Y., Mak, J., van Rees, A., Klein, E. J., & Boller, K.-J. (2018). Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 25-26). Article 8516148 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). IEEE. https://doi.org/10.1109/ISLC.2018.8516148

@inproceedings{519cd918f0f74992814dcfc07db6da00,

title = "Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology",

abstract = "This paper reports on the properties of wavelength-tunable hybrid diode lasers with extended cavities based on silicon nitride waveguide circuits (Si3N4 in SiO2), the latter chosen for its ideal combination of high index contrast and low propagation loss. It was recently shown that the low loss in this platform allows to extend the optical length of the integrated cavity substantially to about 0.5 m. At the same time low loss enables sharp intracavity spectral filtering by cascading micro-ring resonators (MMRs) with various different roundtrip lengths and high quality factors. With such a hybrid laser, we observed single-frequency oscillation with sub-kHz (290 Hz) intrinsic linewidth, which is the lowest value that has ever been demonstrated with a chip-based diode laser.",

author = "Y. Fan and J. Mak and \{van Rees\}, A. and Klein, \{E. J.\} and K.-J. Boller",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516148",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "IEEE",

pages = "25--26",

booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",

address = "United States",

note = "26th International Semiconductor Laser Conference 2018 , ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

}

Fan, Y, Mak, J, van Rees, A, Klein, EJ & Boller, K-J 2018, Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516148, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, IEEE, pp. 25-26, 26th International Semiconductor Laser Conference 2018 , Santa FE, New Mexico, United States, 16/09/18. https://doi.org/10.1109/ISLC.2018.8516148

Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology. / Fan, Y.; Mak, J.; van Rees, A. et al.
26th International Semiconductor Laser Conference, ISLC 2018. IEEE, 2018. p. 25-26 8516148 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology

AU - Fan, Y.

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AU - van Rees, A.

AU - Klein, E. J.

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N1 - Conference code: 26

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N2 - This paper reports on the properties of wavelength-tunable hybrid diode lasers with extended cavities based on silicon nitride waveguide circuits (Si3N4 in SiO2), the latter chosen for its ideal combination of high index contrast and low propagation loss. It was recently shown that the low loss in this platform allows to extend the optical length of the integrated cavity substantially to about 0.5 m. At the same time low loss enables sharp intracavity spectral filtering by cascading micro-ring resonators (MMRs) with various different roundtrip lengths and high quality factors. With such a hybrid laser, we observed single-frequency oscillation with sub-kHz (290 Hz) intrinsic linewidth, which is the lowest value that has ever been demonstrated with a chip-based diode laser.

AB - This paper reports on the properties of wavelength-tunable hybrid diode lasers with extended cavities based on silicon nitride waveguide circuits (Si3N4 in SiO2), the latter chosen for its ideal combination of high index contrast and low propagation loss. It was recently shown that the low loss in this platform allows to extend the optical length of the integrated cavity substantially to about 0.5 m. At the same time low loss enables sharp intracavity spectral filtering by cascading micro-ring resonators (MMRs) with various different roundtrip lengths and high quality factors. With such a hybrid laser, we observed single-frequency oscillation with sub-kHz (290 Hz) intrinsic linewidth, which is the lowest value that has ever been demonstrated with a chip-based diode laser.

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BT - 26th International Semiconductor Laser Conference, ISLC 2018

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ER -

Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology

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Extended-Cavity Single-Frequency Semiconductor Lasers Using Ring Filters in Low-Loss Silicon Nitride Technology

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Extended-Cavity Single-Frequency Semiconductor Lasers using Ring Filters in Low-Loss SiN Technology

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Extended-Cavity Single-Frequency Semiconductor Lasers Using Ring Filters in Low-Loss Silicon Nitride Technology

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