External Net Gain in Monolithically Integrated Si3N4-Al2O3:Er3+ Spiral Waveguide Amplifiers

Dawson B. Bonneville*, Carlos E.Osornio Martinez, Ivo Hegeman, Quentin Coulaud, Meindert Dijkstra, Sonia M. García-Blanco

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

External net gain is demonstrated in the C-band using reactively sputtered Al2O3:Er3+ spiral waveguide amplifiers monolithically integrated with Si3N4. On-chip powers up to 50 mW are measured, with >30 dB internal gain at 1532 nm and external gain of ~5 dB from 1530–1560 nm for a 20 cm waveguide with an erbium concentration of 1.5 ions/cm3.

Original languageEnglish
Title of host publicationThe 25th European Conference on Integrated Optics - Proceedings of ECIO 2024
EditorsJeremy Witzens, Joyce Poon, Lars Zimmermann, Wolfgang Freude
PublisherSpringer
Pages47-50
Number of pages4
ISBN (Electronic)978-3-031-63378-2
ISBN (Print)9783031633775
DOIs
Publication statusPublished - 16 Jun 2024
Event25th European Conference on Integrated Optics, ECIO 2024 - Aachen, Germany
Duration: 17 Jun 202419 Jun 2024
Conference number: 25

Publication series

NameSpringer Proceedings in Physics
Volume402
ISSN (Print)0930-8989
ISSN (Electronic)1867-4941

Conference

Conference25th European Conference on Integrated Optics, ECIO 2024
Abbreviated titleECIO 2024
Country/TerritoryGermany
CityAachen
Period17/06/2419/06/24

Keywords

  • 2024 OA procedure
  • Reactive sputtering
  • Waveguide amplifier
  • Aluminium oxide

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