Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs

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    Abstract

    Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.
    Original languageUndefined
    Title of host publicationProceedings of the 38th European Solid-State Device Research Conference
    Place of PublicationEdinburgh, Schotland
    PublisherIOP Institute of Physics
    Pages242-245
    Number of pages4
    ISBN (Print)978-1-4244-2363-7
    DOIs
    Publication statusPublished - 15 Sep 2008
    Event38th European Solid-State Device Research Conference, ESSDERC 2008 - Edinburgh, United Kingdom
    Duration: 15 Sep 200819 Sep 2008
    Conference number: 38

    Publication series

    Name
    PublisherIOP Institute of Physics
    NumberWoTUG-31

    Conference

    Conference38th European Solid-State Device Research Conference, ESSDERC 2008
    Abbreviated titleESSDERC
    CountryUnited Kingdom
    CityEdinburgh
    Period15/09/0819/09/08

    Keywords

    • SC-DPM: Device Physics and Modeling
    • METIS-254985
    • IR-62600
    • EWI-14585

    Cite this

    van der Steen, J. P. J., Hueting, R. J. E., & Schmitz, J. (2008). Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. In Proceedings of the 38th European Solid-State Device Research Conference (pp. 242-245). [10.1109/ESSDERC.2008.4681743] Edinburgh, Schotland: IOP Institute of Physics. https://doi.org/10.1109/ESSDERC.2008.4681743