Abstract
Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data.
This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.
Original language | Undefined |
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Title of host publication | Proceedings of the 38th European Solid-State Device Research Conference |
Place of Publication | Edinburgh, Schotland |
Publisher | Institute of Physics (IOP) |
Pages | 242-245 |
Number of pages | 4 |
ISBN (Print) | 978-1-4244-2363-7 |
DOIs | |
Publication status | Published - 15 Sept 2008 |
Event | 38th European Solid-State Device Research Conference, ESSDERC 2008 - Edinburgh, United Kingdom Duration: 15 Sept 2008 → 19 Sept 2008 Conference number: 38 |
Publication series
Name | |
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Publisher | IOP Institute of Physics |
Number | WoTUG-31 |
Conference
Conference | 38th European Solid-State Device Research Conference, ESSDERC 2008 |
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Abbreviated title | ESSDERC |
Country/Territory | United Kingdom |
City | Edinburgh |
Period | 15/09/08 → 19/09/08 |
Keywords
- SC-DPM: Device Physics and Modeling
- METIS-254985
- IR-62600
- EWI-14585