Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.
Original languageUndefined
Title of host publicationProceedings of the 38th European Solid-State Device Research Conference
Place of PublicationEdinburgh, Schotland
PublisherIOP Institute of Physics
Pages242-245
Number of pages4
ISBN (Print)978-1-4244-2363-7
DOIs
Publication statusPublished - 15 Sep 2008
Event38th European Solid-State Device Research Conference, ESSDERC 2008 - Edinburgh, United Kingdom
Duration: 15 Sep 200819 Sep 2008
Conference number: 38

Publication series

Name
PublisherIOP Institute of Physics
NumberWoTUG-31

Conference

Conference38th European Solid-State Device Research Conference, ESSDERC 2008
Abbreviated titleESSDERC
CountryUnited Kingdom
CityEdinburgh
Period15/09/0819/09/08

Keywords

  • SC-DPM: Device Physics and Modeling
  • METIS-254985
  • IR-62600
  • EWI-14585

Cite this

van der Steen, J. P. J., Hueting, R. J. E., & Schmitz, J. (2008). Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. In Proceedings of the 38th European Solid-State Device Research Conference (pp. 242-245). [10.1109/ESSDERC.2008.4681743] Edinburgh, Schotland: IOP Institute of Physics. https://doi.org/10.1109/ESSDERC.2008.4681743
van der Steen, J.P.J. ; Hueting, Raymond Josephus Engelbart ; Schmitz, Jurriaan. / Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland : IOP Institute of Physics, 2008. pp. 242-245
@inproceedings{a7b7d42433cf413aacf306d7388f7137,
title = "Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs",
abstract = "Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.",
keywords = "SC-DPM: Device Physics and Modeling, METIS-254985, IR-62600, EWI-14585",
author = "{van der Steen}, J.P.J. and Hueting, {Raymond Josephus Engelbart} and Jurriaan Schmitz",
note = "10.1109/ESSDERC.2008.4681743",
year = "2008",
month = "9",
day = "15",
doi = "10.1109/ESSDERC.2008.4681743",
language = "Undefined",
isbn = "978-1-4244-2363-7",
publisher = "IOP Institute of Physics",
number = "WoTUG-31",
pages = "242--245",
booktitle = "Proceedings of the 38th European Solid-State Device Research Conference",

}

van der Steen, JPJ, Hueting, RJE & Schmitz, J 2008, Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. in Proceedings of the 38th European Solid-State Device Research Conference., 10.1109/ESSDERC.2008.4681743, IOP Institute of Physics, Edinburgh, Schotland, pp. 242-245, 38th European Solid-State Device Research Conference, ESSDERC 2008, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSDERC.2008.4681743

Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. / van der Steen, J.P.J.; Hueting, Raymond Josephus Engelbart; Schmitz, Jurriaan.

Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland : IOP Institute of Physics, 2008. p. 242-245 10.1109/ESSDERC.2008.4681743.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs

AU - van der Steen, J.P.J.

AU - Hueting, Raymond Josephus Engelbart

AU - Schmitz, Jurriaan

N1 - 10.1109/ESSDERC.2008.4681743

PY - 2008/9/15

Y1 - 2008/9/15

N2 - Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

AB - Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

KW - SC-DPM: Device Physics and Modeling

KW - METIS-254985

KW - IR-62600

KW - EWI-14585

U2 - 10.1109/ESSDERC.2008.4681743

DO - 10.1109/ESSDERC.2008.4681743

M3 - Conference contribution

SN - 978-1-4244-2363-7

SP - 242

EP - 245

BT - Proceedings of the 38th European Solid-State Device Research Conference

PB - IOP Institute of Physics

CY - Edinburgh, Schotland

ER -

van der Steen JPJ, Hueting RJE, Schmitz J. Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. In Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland: IOP Institute of Physics. 2008. p. 242-245. 10.1109/ESSDERC.2008.4681743 https://doi.org/10.1109/ESSDERC.2008.4681743