Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs

J.P.J. van der Steen; Raymond Josephus Engelbart Hueting; Jurriaan Schmitz

doi:10.1109/ESSDERC.2008.4681743

Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs

J.P.J. van der Steen, Raymond Josephus Engelbart Hueting, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

5 Downloads (Pure)

Abstract

Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

Original language	Undefined
Title of host publication	Proceedings of the 38th European Solid-State Device Research Conference
Place of Publication	Edinburgh, Schotland
Publisher	Institute of Physics (IOP)
Pages	242-245
Number of pages	4
ISBN (Print)	978-1-4244-2363-7
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681743
Publication status	Published - 15 Sept 2008
Event	38th European Solid-State Device Research Conference, ESSDERC 2008 - Edinburgh, United Kingdom Duration: 15 Sept 2008 → 19 Sept 2008 Conference number: 38

Publication series

Name
Publisher	IOP Institute of Physics
Number	WoTUG-31

Conference

Conference	38th European Solid-State Device Research Conference, ESSDERC 2008
Abbreviated title	ESSDERC
Country/Territory	United Kingdom
City	Edinburgh
Period	15/09/08 → 19/09/08

Keywords

SC-DPM: Device Physics and Modeling
METIS-254985
IR-62600
EWI-14585

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ESSDERC.2008.4681743

http://eprints.eemcs.utwente.nl/secure2/14585/01/essderc_steen.pdf

Cite this

@inproceedings{a7b7d42433cf413aacf306d7388f7137,

title = "Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs",

abstract = "Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.",

keywords = "SC-DPM: Device Physics and Modeling, METIS-254985, IR-62600, EWI-14585",

author = "{van der Steen}, J.P.J. and Hueting, {Raymond Josephus Engelbart} and Jurriaan Schmitz",

note = "10.1109/ESSDERC.2008.4681743 ; 38th European Solid-State Device Research Conference, ESSDERC 2008 ; Conference date: 15-09-2008 Through 19-09-2008",

year = "2008",

month = sep,

day = "15",

doi = "10.1109/ESSDERC.2008.4681743",

language = "Undefined",

isbn = "978-1-4244-2363-7",

publisher = "Institute of Physics (IOP)",

number = "WoTUG-31",

pages = "242--245",

booktitle = "Proceedings of the 38th European Solid-State Device Research Conference",

address = "United Kingdom",

}

van der Steen, JPJ, Hueting, RJE & Schmitz, J 2008, Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. in Proceedings of the 38th European Solid-State Device Research Conference., 10.1109/ESSDERC.2008.4681743, Institute of Physics (IOP), Edinburgh, Schotland, pp. 242-245, 38th European Solid-State Device Research Conference, ESSDERC 2008, Edinburgh, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSDERC.2008.4681743

Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. / van der Steen, J.P.J.; Hueting, Raymond Josephus Engelbart ; Schmitz, Jurriaan.
Proceedings of the 38th European Solid-State Device Research Conference. Edinburgh, Schotland: Institute of Physics (IOP), 2008. p. 242-245 10.1109/ESSDERC.2008.4681743.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs

AU - van der Steen, J.P.J.

AU - Hueting, Raymond Josephus Engelbart

AU - Schmitz, Jurriaan

N1 - Conference code: 38

PY - 2008/9/15

Y1 - 2008/9/15

N2 - Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

AB - Structural quantum confinement in thin silicon double-gate MOSFETs has been quantified using the temperature dependence of the subthreshold current. The results were compared with the shifts in threshold voltage. Data was obtained from simulations after initial verification with experimental data. This study demonstrates that with the temperature dependence of the subthreshold current, shifts in the valence and conduction band edge can be extracted separately from changes in mobility and density of states, making this method more accurate than the commonly used threshold voltage method.

KW - SC-DPM: Device Physics and Modeling

KW - METIS-254985

KW - IR-62600

KW - EWI-14585

U2 - 10.1109/ESSDERC.2008.4681743

DO - 10.1109/ESSDERC.2008.4681743

M3 - Conference contribution

SN - 978-1-4244-2363-7

SP - 242

EP - 245

BT - Proceedings of the 38th European Solid-State Device Research Conference

PB - Institute of Physics (IOP)

CY - Edinburgh, Schotland

T2 - 38th European Solid-State Device Research Conference, ESSDERC 2008

Y2 - 15 September 2008 through 19 September 2008

ER -