Extracting the Conduction Band Offset in Strained FinFETs from Subthreshold-Current Measurements

T. van Hemert, B. Kaleli, Raymond Josephus Engelbart Hueting, D. Esseni, M.J.H. van Dal, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)


    2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Subthreshold measurements can reveal key device parameters. We present a method to identify the region of the transfer characteristic where the drain current is affected by neither parasitic off-state leakage nor strong inversion current. Then we employ this method to obtain the conduction band edge shift for FinFETs with various fin widths using temperature dependent transfer characteristics. The results indicate lowering of the conduction band edge up to 40 meV, and hence threshold voltage, for fin widths down to 5 nm. This is explained by the combination of quantum confinement and strain effect on the band edges. We demonstrate a qualitative agreement between measurements, theory and simulation.
    Original languageUndefined
    Title of host publicationProceedings of the 41st European Solid-State Device Research Conference (Essderc 2011)
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Number of pages4
    ISBN (Print)978-1-4577-0708-7
    Publication statusPublished - 12 Sep 2011
    Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
    Duration: 12 Sep 201116 Sep 2011
    Conference number: 41

    Publication series

    PublisherIEEE Solid-State Circuits Society


    Conference41st European Solid-State Device Research Conference, ESSDERC 2011
    Abbreviated titleESSDERC


    • METIS-281535
    • EWI-20550
    • IR-78807

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