Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

Nebojŝa Nenadović*, Slobodan Mijalković, Lis K. Nanver, Lode K.J. Vandamme, Vincenzo D'Alessandro, Hugo Schellevis, Jan W. Slotboom

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

52 Citations (Scopus)

Abstract

A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the small-signal thermal impedance network of bipolar devices and circuits. The extraction procedure is demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling of the mutual thermal coupling obtained by fitting a multi-pole rational complex function to measured data is presented.

Original languageEnglish
Pages (from-to)1764-1772
Number of pages9
JournalIEEE journal of solid-state circuits
Volume39
Issue number10
DOIs
Publication statusPublished - 1 Oct 2004
Externally publishedYes

Keywords

  • Bipolar transistor
  • Electrothermal modeling
  • Self-heating
  • Silicon-on-glass
  • Thermal coupling
  • Thermal impedance

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    Nenadović, N., Mijalković, S., Nanver, L. K., Vandamme, L. K. J., D'Alessandro, V., Schellevis, H., & Slotboom, J. W. (2004). Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors. IEEE journal of solid-state circuits, 39(10), 1764-1772. https://doi.org/10.1109/JSSC.2004.833766