Extraction of the Electric Field in Field Plate Assisted RESURF Devices

B.K. Boksteen; S. Dhar; A. Heringa; G.E.J. Koops; Raymond Josephus Engelbart Hueting

doi:10.1109/ISPSD.2012.6229044

Extraction of the Electric Field in Field Plate Assisted RESURF Devices

B.K. Boksteen, S. Dhar, A. Heringa, G.E.J. Koops, Raymond Josephus Engelbart Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

1 Downloads (Pure)

Abstract

It has previously been reported that the lateral electric field (Ex) in the drain extension of thin SOI HV (700V) field plate assisted RESURF devices can be extracted from their ID-VD characteristics in the subthreshold regime. In this work the prerequisites for valid field extraction and the (voltage) range of validity are established for linearly graded drain extension based RESURF devices through a combination of analytical calculations and TCAD device modeling. It is shown that the most important condition for field extraction is that an increment dVDS should not affect the lateral field at the already depleted zone. This unique condition is found to be met in the drain extension at distances larger than a specific length (5.3_) governed by the drain extension silicon and oxide thicknesses. For realistic device parameters the method is shown to hold for devices with a BVDS of _ 150V and higher.

Original language	Undefined
Title of host publication	Proceedings of 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012)
Place of Publication	USA
Publisher	IEEE
Pages	145-148
Number of pages	4
ISBN (Print)	978-1-4577-1594-5
DOIs	https://doi.org/10.1109/ISPSD.2012.6229044
Publication status	Published - 3 Jun 2012
Event	24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012 - Old Sint Jan, Conference Center, Bruges, Belgium Duration: 3 Jun 2012 → 7 Jun 2012 Conference number: 24

Publication series

Name
Publisher	IEEE Electron Devices Society
ISSN (Print)	1943-653X

Conference

Conference	24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012
Abbreviated title	ISPSD 2012
Country/Territory	Belgium
City	Bruges
Period	3/06/12 → 7/06/12

Keywords

IR-80928
METIS-287946
SOI
EWI-22085
field extraction
electric field
RESURF
High-voltage

Access to Document

10.1109/ISPSD.2012.6229044

http://eprints.eemcs.utwente.nl/secure2/22085/01/Boksteen_145-148.pdf

Cite this

@inproceedings{96bfaf880d0347f195bd6796efd82fd8,

title = "Extraction of the Electric Field in Field Plate Assisted RESURF Devices",

abstract = "It has previously been reported that the lateral electric field (Ex) in the drain extension of thin SOI HV (700V) field plate assisted RESURF devices can be extracted from their ID-VD characteristics in the subthreshold regime. In this work the prerequisites for valid field extraction and the (voltage) range of validity are established for linearly graded drain extension based RESURF devices through a combination of analytical calculations and TCAD device modeling. It is shown that the most important condition for field extraction is that an increment dVDS should not affect the lateral field at the already depleted zone. This unique condition is found to be met in the drain extension at distances larger than a specific length (5.3_) governed by the drain extension silicon and oxide thicknesses. For realistic device parameters the method is shown to hold for devices with a BVDS of _ 150V and higher.",

keywords = "IR-80928, METIS-287946, SOI, EWI-22085, field extraction, electric field, RESURF, High-voltage",

author = "B.K. Boksteen and S. Dhar and A. Heringa and G.E.J. Koops and Hueting, {Raymond Josephus Engelbart}",

note = "10.1109/ISPSD.2012.6229044 ; 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012 ; Conference date: 03-06-2012 Through 07-06-2012",

year = "2012",

month = jun,

day = "3",

doi = "10.1109/ISPSD.2012.6229044",

language = "Undefined",

isbn = "978-1-4577-1594-5",

publisher = "IEEE",

pages = "145--148",

booktitle = "Proceedings of 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012)",

address = "United States",

}

Boksteen, BK, Dhar, S, Heringa, A, Koops, GEJ & Hueting, RJE 2012, Extraction of the Electric Field in Field Plate Assisted RESURF Devices. in Proceedings of 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012). IEEE, USA, pp. 145-148, 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012, Bruges, Belgium, 3/06/12. https://doi.org/10.1109/ISPSD.2012.6229044

TY - GEN

T1 - Extraction of the Electric Field in Field Plate Assisted RESURF Devices

AU - Boksteen, B.K.

AU - Dhar, S.

AU - Heringa, A.

AU - Koops, G.E.J.

AU - Hueting, Raymond Josephus Engelbart

N1 - Conference code: 24

PY - 2012/6/3

Y1 - 2012/6/3

N2 - It has previously been reported that the lateral electric field (Ex) in the drain extension of thin SOI HV (700V) field plate assisted RESURF devices can be extracted from their ID-VD characteristics in the subthreshold regime. In this work the prerequisites for valid field extraction and the (voltage) range of validity are established for linearly graded drain extension based RESURF devices through a combination of analytical calculations and TCAD device modeling. It is shown that the most important condition for field extraction is that an increment dVDS should not affect the lateral field at the already depleted zone. This unique condition is found to be met in the drain extension at distances larger than a specific length (5.3_) governed by the drain extension silicon and oxide thicknesses. For realistic device parameters the method is shown to hold for devices with a BVDS of _ 150V and higher.

AB - It has previously been reported that the lateral electric field (Ex) in the drain extension of thin SOI HV (700V) field plate assisted RESURF devices can be extracted from their ID-VD characteristics in the subthreshold regime. In this work the prerequisites for valid field extraction and the (voltage) range of validity are established for linearly graded drain extension based RESURF devices through a combination of analytical calculations and TCAD device modeling. It is shown that the most important condition for field extraction is that an increment dVDS should not affect the lateral field at the already depleted zone. This unique condition is found to be met in the drain extension at distances larger than a specific length (5.3_) governed by the drain extension silicon and oxide thicknesses. For realistic device parameters the method is shown to hold for devices with a BVDS of _ 150V and higher.

KW - IR-80928

KW - METIS-287946

KW - SOI

KW - EWI-22085

KW - field extraction

KW - electric field

KW - RESURF

KW - High-voltage

U2 - 10.1109/ISPSD.2012.6229044

DO - 10.1109/ISPSD.2012.6229044

M3 - Conference contribution

SN - 978-1-4577-1594-5

SP - 145

EP - 148

BT - Proceedings of 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012)

PB - IEEE

CY - USA

T2 - 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012

Y2 - 3 June 2012 through 7 June 2012

ER -