Extraction of the Electric Field in Field Plate Assisted RESURF Devices

B.K. Boksteen, S. Dhar, A. Heringa, G.E.J. Koops, Raymond Josephus Engelbart Hueting

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)

    Abstract

    It has previously been reported that the lateral electric field (Ex) in the drain extension of thin SOI HV (700V) field plate assisted RESURF devices can be extracted from their ID-VD characteristics in the subthreshold regime. In this work the prerequisites for valid field extraction and the (voltage) range of validity are established for linearly graded drain extension based RESURF devices through a combination of analytical calculations and TCAD device modeling. It is shown that the most important condition for field extraction is that an increment dVDS should not affect the lateral field at the already depleted zone. This unique condition is found to be met in the drain extension at distances larger than a specific length (5.3_) governed by the drain extension silicon and oxide thicknesses. For realistic device parameters the method is shown to hold for devices with a BVDS of _ 150V and higher.
    Original languageUndefined
    Title of host publicationProceedings of 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2012)
    Place of PublicationUSA
    PublisherIEEE Electron Devices Society
    Pages145-148
    Number of pages4
    ISBN (Print)978-1-4577-1594-5
    DOIs
    Publication statusPublished - 3 Jun 2012
    Event24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012 - Old Sint Jan, Conference Center, Bruges, Belgium
    Duration: 3 Jun 20127 Jun 2012
    Conference number: 24

    Publication series

    Name
    PublisherIEEE Electron Devices Society
    ISSN (Print)1943-653X

    Conference

    Conference24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012
    Abbreviated titleISPSD 2012
    CountryBelgium
    CityBruges
    Period3/06/127/06/12

    Keywords

    • IR-80928
    • METIS-287946
    • SOI
    • EWI-22085
    • field extraction
    • electric field
    • RESURF
    • High-voltage

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