Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

Yunzhong Chen, F. Trier, Tom Wijnands, R.J. Green, N. Gauquelin, R. Egoavil, D.V. Christensen, Gertjan Koster, Mark Huijben, N. Bovet, S. Macke, F. He, R. Sutarto, N.H. Andersen, J.A. Sulpizio, M. Honig, G.E.D.K. Prawiroatmodjo, T.S. Jespersen, S. Linderoth, S. Ilani & 5 others J. Verbeeck, G. van Tendeloo, Augustinus J.H.M. Rijnders, G.A. Sawatzky, N. Pryds

Research output: Contribution to journalArticleAcademicpeer-review

  • 68 Citations

Abstract

Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal–insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1−xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov–de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.
LanguageUndefined
Pages801-806
Number of pages7
JournalNature materials
Volume14
DOIs
Publication statusPublished - 2015

Keywords

  • METIS-310531
  • IR-96686

Cite this

Chen, Yunzhong ; Trier, F. ; Wijnands, Tom ; Green, R.J. ; Gauquelin, N. ; Egoavil, R. ; Christensen, D.V. ; Koster, Gertjan ; Huijben, Mark ; Bovet, N. ; Macke, S. ; He, F. ; Sutarto, R. ; Andersen, N.H. ; Sulpizio, J.A. ; Honig, M. ; Prawiroatmodjo, G.E.D.K. ; Jespersen, T.S. ; Linderoth, S. ; Ilani, S. ; Verbeeck, J. ; van Tendeloo, G. ; Rijnders, Augustinus J.H.M. ; Sawatzky, G.A. ; Pryds, N. / Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping. In: Nature materials. 2015 ; Vol. 14. pp. 801-806.
@article{1ead22df32c54848a8480b99c84b6f35,
title = "Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping",
abstract = "Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal–insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1−xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov–de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.",
keywords = "METIS-310531, IR-96686",
author = "Yunzhong Chen and F. Trier and Tom Wijnands and R.J. Green and N. Gauquelin and R. Egoavil and D.V. Christensen and Gertjan Koster and Mark Huijben and N. Bovet and S. Macke and F. He and R. Sutarto and N.H. Andersen and J.A. Sulpizio and M. Honig and G.E.D.K. Prawiroatmodjo and T.S. Jespersen and S. Linderoth and S. Ilani and J. Verbeeck and {van Tendeloo}, G. and Rijnders, {Augustinus J.H.M.} and G.A. Sawatzky and N. Pryds",
year = "2015",
doi = "10.1038/NMAT4303",
language = "Undefined",
volume = "14",
pages = "801--806",
journal = "Nature materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",

}

Chen, Y, Trier, F, Wijnands, T, Green, RJ, Gauquelin, N, Egoavil, R, Christensen, DV, Koster, G, Huijben, M, Bovet, N, Macke, S, He, F, Sutarto, R, Andersen, NH, Sulpizio, JA, Honig, M, Prawiroatmodjo, GEDK, Jespersen, TS, Linderoth, S, Ilani, S, Verbeeck, J, van Tendeloo, G, Rijnders, AJHM, Sawatzky, GA & Pryds, N 2015, 'Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping' Nature materials, vol. 14, pp. 801-806. https://doi.org/10.1038/NMAT4303

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping. / Chen, Yunzhong; Trier, F.; Wijnands, Tom; Green, R.J.; Gauquelin, N.; Egoavil, R.; Christensen, D.V.; Koster, Gertjan; Huijben, Mark; Bovet, N.; Macke, S.; He, F.; Sutarto, R.; Andersen, N.H.; Sulpizio, J.A.; Honig, M.; Prawiroatmodjo, G.E.D.K.; Jespersen, T.S.; Linderoth, S.; Ilani, S.; Verbeeck, J.; van Tendeloo, G.; Rijnders, Augustinus J.H.M.; Sawatzky, G.A.; Pryds, N.

In: Nature materials, Vol. 14, 2015, p. 801-806.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

AU - Chen, Yunzhong

AU - Trier, F.

AU - Wijnands, Tom

AU - Green, R.J.

AU - Gauquelin, N.

AU - Egoavil, R.

AU - Christensen, D.V.

AU - Koster, Gertjan

AU - Huijben, Mark

AU - Bovet, N.

AU - Macke, S.

AU - He, F.

AU - Sutarto, R.

AU - Andersen, N.H.

AU - Sulpizio, J.A.

AU - Honig, M.

AU - Prawiroatmodjo, G.E.D.K.

AU - Jespersen, T.S.

AU - Linderoth, S.

AU - Ilani, S.

AU - Verbeeck, J.

AU - van Tendeloo, G.

AU - Rijnders, Augustinus J.H.M.

AU - Sawatzky, G.A.

AU - Pryds, N.

PY - 2015

Y1 - 2015

N2 - Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal–insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1−xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov–de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.

AB - Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal–insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1−xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov–de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.

KW - METIS-310531

KW - IR-96686

U2 - 10.1038/NMAT4303

DO - 10.1038/NMAT4303

M3 - Article

VL - 14

SP - 801

EP - 806

JO - Nature materials

T2 - Nature materials

JF - Nature materials

SN - 1476-1122

ER -