Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

Y.Z. Chen*, F. Trier, T. Wijnands, R.J. Green, N. Gauquelin, R. Egoavil, D.V. Christensen, G. Koster, M. Huijben, N. Bovet, S. Macke, F. He, R. Sutarto, N. H. Andersen, J.A. Sulpizio, M. Honig, G.E.D.K. Prawiroatmodjo, T.S. Jespersen, S. Linderoth, S. IlaniJ. Verbeeck, G. Van Tendeloo, G. Rijnders, G.A. Sawatzky, N. Pryds

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metal-insulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La 1â'x Sr x MnO 3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO 3 and crystalline SrTiO 3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikov-de Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.

Original languageEnglish
Pages (from-to)801-806
Number of pages6
JournalNature materials
Volume14
Issue number8
DOIs
Publication statusPublished - 28 Aug 2015

Keywords

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