Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.
|Publication status||Published - 22 Jan 2012|
|Event||Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands|
Duration: 17 Jan 2012 → 18 Jan 2012
|Conference||Physics@FOM Veldhoven 2012|
|Period||17/01/12 → 18/01/12|
Medvedev, V., Yakshin, A., Louis, E., van de Kruijs, R. W. E., van den Boogaard, T., Krivtsun, V. M., ... Bijkerk, F. (2012). Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.