Abstract
Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.
| Original language | English |
|---|---|
| Pages | - |
| Publication status | Published - 22 Jan 2012 |
| Event | Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands Duration: 17 Jan 2012 → 18 Jan 2012 |
Conference
| Conference | Physics@FOM Veldhoven 2012 |
|---|---|
| Country | Netherlands |
| City | Veldhoven |
| Period | 17/01/12 → 18/01/12 |
Keywords
- METIS-298892
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Medvedev, V., Yakshin, A., Louis, E., van de Kruijs, R. W. E., van den Boogaard, T., Krivtsun, V. M., ... Bijkerk, F. (2012). Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties. -. Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.