Abstract
| Original language | English |
|---|---|
| Pages | - |
| Publication status | Published - 22 Jan 2012 |
| Event | Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands Duration: 17 Jan 2012 → 18 Jan 2012 |
Conference
| Conference | Physics@FOM Veldhoven 2012 |
|---|---|
| Country | Netherlands |
| City | Veldhoven |
| Period | 17/01/12 → 18/01/12 |
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Keywords
- METIS-298892
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Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties. / Medvedev, Viacheslav; Yakshin, Andrey; Louis, Eric; van de Kruijs, Robbert Wilhelmus Elisabeth; van den Boogaard, Toine; Krivtsun, V.M.; Yakunin, A.M.; Bijkerk, Frederik.
2012. - Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.Research output: Contribution to conference › Poster › Other research output
TY - CONF
T1 - Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties
AU - Medvedev, Viacheslav
AU - Yakshin, Andrey
AU - Louis, Eric
AU - van de Kruijs, Robbert Wilhelmus Elisabeth
AU - van den Boogaard, Toine
AU - Krivtsun, V.M.
AU - Yakunin, A.M.
AU - Bijkerk, Frederik
PY - 2012/1/22
Y1 - 2012/1/22
N2 - Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.
AB - Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.
KW - METIS-298892
M3 - Poster
SP - -
ER -