Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties

Viacheslav Medvedev; Andrey Yakshin; Eric Louis; Robbert Wilhelmus Elisabeth van de Kruijs; Toine van den Boogaard; V.M. Krivtsun; A.M. Yakunin; Frederik Bijkerk

Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties

Viacheslav Medvedev, Andrey Yakshin, Eric Louis, Robbert Wilhelmus Elisabeth van de Kruijs, Toine van den Boogaard, V.M. Krivtsun, A.M. Yakunin, Frederik Bijkerk

Research output: Contribution to conference › Poster › Other research output

Abstract

Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.

Original language	English
Pages	-
Publication status	Published - 22 Jan 2012
Event	Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands Duration: 17 Jan 2012 → 18 Jan 2012

Conference

Conference	Physics@FOM Veldhoven 2012
Country	Netherlands
City	Veldhoven
Period	17/01/12 → 18/01/12

Keywords

METIS-298892

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title = "Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties",

abstract = "Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.",

keywords = "METIS-298892",

author = "Viacheslav Medvedev and Andrey Yakshin and Eric Louis and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and {van den Boogaard}, Toine and V.M. Krivtsun and A.M. Yakunin and Frederik Bijkerk",

year = "2012",

month = jan,

day = "22",

language = "English",

pages = "--",

note = "Physics@FOM Veldhoven 2012 : Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing ; Conference date: 17-01-2012 Through 18-01-2012",

}

Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties. / Medvedev, Viacheslav; Yakshin, Andrey ; Louis, Eric ; van de Kruijs, Robbert Wilhelmus Elisabeth; van den Boogaard, Toine; Krivtsun, V.M.; Yakunin, A.M.; Bijkerk, Frederik.

2012. - Poster session presented at Physics@FOM Veldhoven 2012, Veldhoven, Netherlands.

Research output: Contribution to conference › Poster › Other research output

TY - CONF

T1 - Extreme Ultraviolet Bragg mirrors with suppressed infrared reflectivity properties

AU - Medvedev, Viacheslav

AU - Yakshin, Andrey

AU - Louis, Eric

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - van den Boogaard, Toine

AU - Krivtsun, V.M.

AU - Yakunin, A.M.

AU - Bijkerk, Frederik

PY - 2012/1/22

Y1 - 2012/1/22

N2 - Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.

AB - Many optical applications demand high reflectivity in a particular wavelength range while simultaneously requiring suppression of radiation outside this range. Such parasitic radiation can for instance lead to image distortions in imaging applications or poor signal-noise ratios in spectroscopy. The most obvious need for radiation with high “spectral purity” can be found in extreme UV lithography (EUVL). EUVL utilizes narrow-band (13.5 nm ± 1%) radiation being extracted from a broad-band spectrum emitted by dense hot plasma sources. For this purpose we proposed and investigated various methods to integrate EUV reflecting multilayers with resonant infrared anti-reflecting structures. We discuss our pilot experiments, physics and optical properties of the realized structures in broad spectral range – from the EUV up to the infrared ranges.

KW - METIS-298892

M3 - Poster

SP - -

T2 - Physics@FOM Veldhoven 2012

Y2 - 17 January 2012 through 18 January 2012

ER -