Extreme Ultraviolet (EUV) induced defects on few-layer graphene

An Gao; P.J. Rizo; E. Zoethout; L. Scaccabarozzi; Christopher James Lee; V. Banine; Frederik Bijkerk

doi:10.1063/1.4817082

Extreme Ultraviolet (EUV) induced defects on few-layer graphene

An Gao, P.J. Rizo, E. Zoethout, L. Scaccabarozzi, Christopher James Lee, V. Banine, Frederik Bijkerk

Research output: Contribution to journal › Article › Academic › peer-review

12 Citations (Scopus)

Abstract

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

Original language	English
Article number	044313
Pages (from-to)	-
Number of pages	5
Journal	Journal of Applied Physics
Volume	114
Issue number	4
DOIs	https://doi.org/10.1063/1.4817082
Publication status	Published - 2013

Keywords

METIS-299271
IR-88100

Access to Document

10.1063/1.4817082

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abstract = "We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.",

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AU - Gao, An

AU - Rizo, P.J.

AU - Zoethout, E.

AU - Scaccabarozzi, L.

AU - Lee, Christopher James

AU - Banine, V.

AU - Bijkerk, Frederik

PY - 2013

Y1 - 2013

N2 - We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

AB - We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

KW - METIS-299271

KW - IR-88100

U2 - 10.1063/1.4817082

DO - 10.1063/1.4817082

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