Abstract
We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H2 background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp2 bonded carbon fraction decreases while the sp3 bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.
| Original language | English |
|---|---|
| Article number | 044313 |
| Pages (from-to) | - |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 114 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2013 |
Keywords
- METIS-299271
- IR-88100
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Gao, A., Rizo, P. J., Zoethout, E., Scaccabarozzi, L., Lee, C. J., Banine, V., & Bijkerk, F. (2013). Extreme Ultraviolet (EUV) induced defects on few-layer graphene. Journal of Applied Physics, 114(4), -. [044313]. https://doi.org/10.1063/1.4817082