Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes

A. Dolgov; O. Yakushev; A. Abrikosov; E. Snegirev; V.M. Krivtsun; Christopher James Lee; Frederik Bijkerk

doi:10.1088/0963-0252/24/3/035003

Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes

A. Dolgov, O. Yakushev, A. Abrikosov, E. Snegirev, V.M. Krivtsun, Christopher James Lee, Frederik Bijkerk

Research output: Contribution to journal › Article › Academic › peer-review

14 Citations (Scopus)

Abstract

An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed

Original language	English
Article number	035003
Pages (from-to)	-
Number of pages	7
Journal	Plasma sources science and technology
Volume	24
Issue number	3
DOIs	https://doi.org/10.1088/0963-0252/24/3/035003
Publication status	Published - 29 Apr 2015

Fingerprint

Keywords

METIS-310344
IR-95672

Cite this

Dolgov, A., Yakushev, O., Abrikosov, A., Snegirev, E., Krivtsun, V. M., Lee, C. J., & Bijkerk, F. (2015). Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes. Plasma sources science and technology, 24(3), -. [035003]. https://doi.org/10.1088/0963-0252/24/3/035003

@article{473619301a944e85b919406b0daf1aa6,

title = "Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes",

abstract = "An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed",

keywords = "METIS-310344, IR-95672",

author = "A. Dolgov and O. Yakushev and A. Abrikosov and E. Snegirev and V.M. Krivtsun and Lee, {Christopher James} and Frederik Bijkerk",

year = "2015",

month = "4",

day = "29",

doi = "10.1088/0963-0252/24/3/035003",

language = "English",

volume = "24",

pages = "--",

journal = "Plasma sources science and technology",

issn = "0963-0252",

publisher = "IOP Publishing Ltd.",

number = "3",

}

Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes. / Dolgov, A.; Yakushev, O.; Abrikosov, A.; Snegirev, E.; Krivtsun, V.M.; Lee, Christopher James ; Bijkerk, Frederik.

In: Plasma sources science and technology, Vol. 24, No. 3, 035003, 29.04.2015, p. -.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes

AU - Dolgov, A.

AU - Yakushev, O.

AU - Abrikosov, A.

AU - Snegirev, E.

AU - Krivtsun, V.M.

AU - Lee, Christopher James

AU - Bijkerk, Frederik

PY - 2015/4/29

Y1 - 2015/4/29

N2 - An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed

AB - An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed

KW - METIS-310344

KW - IR-95672

U2 - 10.1088/0963-0252/24/3/035003

DO - 10.1088/0963-0252/24/3/035003

M3 - Article

VL - 24

SP - -

JO - Plasma sources science and technology

JF - Plasma sources science and technology

SN - 0963-0252

IS - 3

M1 - 035003

ER -

Access to Document

10.1088/0963-0252/24/3/035003