Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes

A. Dolgov, O. Yakushev, A. Abrikosov, E. Snegirev, V.M. Krivtsun, Christopher James Lee, Frederik Bijkerk

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An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed
Original languageEnglish
Article number035003
Pages (from-to)-
Number of pages7
JournalPlasma sources science and technology
Issue number3
Publication statusPublished - 29 Apr 2015



  • METIS-310344
  • IR-95672

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