Extreme UltraViolet lithography

Jos Benschop; Erik Loopstra

Extreme UltraViolet lithography

Jos Benschop, Erik Loopstra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Extreme UltraViolet Lithography (EUVL), using 13.5 nm wavelength, all reflective optics and a vacuum environment, is the leading candidate to succeed immersion 193nm lithography to print features with sizes of 22 nm and below. Several major programs worldwide have matured this technology since the late 1980's. In 2006 ASML shipped the first Alpha Demo tools (NA=0.25 full field scanners) to IMEC in Belgium and CNSE in Albany, USA. Currently early production tools are being assembled. After a short introduction into IC fabrication, and the role of lithography, it will be explained why EUVL will be used to enable Moore's Law in a cost effective way. A brief history of EUVL will be followed by latest results obtained with the Alpha Demo tools. Status of the integration of the early production tools will be shared including an update on critical tool related issues including the EUV source. Finally the future technology roadmap will be shared explaining how EUVL will be stretched over multiple generations.

Original language	English
Title of host publication	Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010
Editors	H. Van Brussel, Henny Spaan, P. Shore, Theresa Burke
Publisher	EUSPEN
Pages	2-5
Number of pages	4
ISBN (Electronic)	9780955308284
Publication status	Published - 1 Jan 2010
Externally published	Yes
Event	10th EUSPEN International Conference 2010 - Delft, Netherlands Duration: 31 May 2010 → 4 Jun 2010 Conference number: 10

Publication series

Name	Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010
Volume	1

Conference

Conference	10th EUSPEN International Conference 2010
Abbreviated title	EUSPEN
Country/Territory	Netherlands
City	Delft
Period	31/05/10 → 4/06/10
Other	NOT the same as 10th Anniversary International Conference (see dates and place)

Cite this

Benschop, J., & Loopstra, E. (2010). Extreme UltraViolet lithography. In H. Van Brussel, H. Spaan, P. Shore, & T. Burke (Eds.), Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010 (pp. 2-5). (Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010; Vol. 1). EUSPEN.

Benschop, Jos ; Loopstra, Erik. / Extreme UltraViolet lithography. Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010. editor / H. Van Brussel ; Henny Spaan ; P. Shore ; Theresa Burke. EUSPEN, 2010. pp. 2-5 (Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010).

@inproceedings{cac42503df3f4e5999830b6701d228e2,

title = "Extreme UltraViolet lithography",

abstract = "Extreme UltraViolet Lithography (EUVL), using 13.5 nm wavelength, all reflective optics and a vacuum environment, is the leading candidate to succeed immersion 193nm lithography to print features with sizes of 22 nm and below. Several major programs worldwide have matured this technology since the late 1980's. In 2006 ASML shipped the first Alpha Demo tools (NA=0.25 full field scanners) to IMEC in Belgium and CNSE in Albany, USA. Currently early production tools are being assembled. After a short introduction into IC fabrication, and the role of lithography, it will be explained why EUVL will be used to enable Moore's Law in a cost effective way. A brief history of EUVL will be followed by latest results obtained with the Alpha Demo tools. Status of the integration of the early production tools will be shared including an update on critical tool related issues including the EUV source. Finally the future technology roadmap will be shared explaining how EUVL will be stretched over multiple generations.",

author = "Jos Benschop and Erik Loopstra",

year = "2010",

month = jan,

day = "1",

language = "English",

series = "Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010",

publisher = "EUSPEN",

pages = "2--5",

editor = "{Van Brussel}, H. and Henny Spaan and P. Shore and Theresa Burke",

booktitle = "Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010",

note = "10th EUSPEN International Conference 2010, EUSPEN ; Conference date: 31-05-2010 Through 04-06-2010",

}

Benschop, J & Loopstra, E 2010, Extreme UltraViolet lithography. in H Van Brussel, H Spaan, P Shore & T Burke (eds), Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010. Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010, vol. 1, EUSPEN, pp. 2-5, 10th EUSPEN International Conference 2010, Delft, Netherlands, 31/05/10.

Extreme UltraViolet lithography. / Benschop, Jos; Loopstra, Erik.
Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010. ed. / H. Van Brussel; Henny Spaan; P. Shore; Theresa Burke. EUSPEN, 2010. p. 2-5 (Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Extreme UltraViolet lithography

AU - Benschop, Jos

AU - Loopstra, Erik

N1 - Conference code: 10

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Extreme UltraViolet Lithography (EUVL), using 13.5 nm wavelength, all reflective optics and a vacuum environment, is the leading candidate to succeed immersion 193nm lithography to print features with sizes of 22 nm and below. Several major programs worldwide have matured this technology since the late 1980's. In 2006 ASML shipped the first Alpha Demo tools (NA=0.25 full field scanners) to IMEC in Belgium and CNSE in Albany, USA. Currently early production tools are being assembled. After a short introduction into IC fabrication, and the role of lithography, it will be explained why EUVL will be used to enable Moore's Law in a cost effective way. A brief history of EUVL will be followed by latest results obtained with the Alpha Demo tools. Status of the integration of the early production tools will be shared including an update on critical tool related issues including the EUV source. Finally the future technology roadmap will be shared explaining how EUVL will be stretched over multiple generations.

AB - Extreme UltraViolet Lithography (EUVL), using 13.5 nm wavelength, all reflective optics and a vacuum environment, is the leading candidate to succeed immersion 193nm lithography to print features with sizes of 22 nm and below. Several major programs worldwide have matured this technology since the late 1980's. In 2006 ASML shipped the first Alpha Demo tools (NA=0.25 full field scanners) to IMEC in Belgium and CNSE in Albany, USA. Currently early production tools are being assembled. After a short introduction into IC fabrication, and the role of lithography, it will be explained why EUVL will be used to enable Moore's Law in a cost effective way. A brief history of EUVL will be followed by latest results obtained with the Alpha Demo tools. Status of the integration of the early production tools will be shared including an update on critical tool related issues including the EUV source. Finally the future technology roadmap will be shared explaining how EUVL will be stretched over multiple generations.

UR - http://www.scopus.com/inward/record.url?scp=84911429981&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84911429981

T3 - Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010

SP - 2

EP - 5

BT - Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010

A2 - Van Brussel, H.

A2 - Spaan, Henny

A2 - Shore, P.

A2 - Burke, Theresa

PB - EUSPEN

T2 - 10th EUSPEN International Conference 2010

Y2 - 31 May 2010 through 4 June 2010

ER -

Benschop J, Loopstra E. Extreme UltraViolet lithography. In Van Brussel H, Spaan H, Shore P, Burke T, editors, Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010. EUSPEN. 2010. p. 2-5. (Proceedings of the 10th International Conference of the European Society for Precision Engineering and Nanotechnology, EUSPEN 2010).

Extreme UltraViolet lithography

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