Extreme ultraviolet lithography: Status and prospects

Jos Benschop, Vadim Banine, Sjoerd Lok, Erik Loopstra

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Abstract

Extreme ultraviolet lithography (EUVL) using 13.5 nm wavelength light is the leading candidate to succeed 193 nm immersion lithography, enabling semiconductor chips with features smaller than 22 nm. Several major programs worldwide have developed this technology in recent years [D. A. Tichenor, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H. Stuten (1993), Vol. 18, p. 79; H. Kinachita, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H Stulen (1993), Vol. 18, p. 74; J. P. H. Benschop, W. M. Kaiser, and D. C. Ockwell, Proc. SPIE 3676, 246 (1999)] and in 2006, ASML shipped the first EUV Alpha Demo tools (NA=0.25 full-field scanners) to IMEC in Belgium [A. M. Goethals, Proc. SPIE 6517, 651709 (2007)] and CNSE in Albany [O. Wood, Proc. SPIE 6517, 6517-041 (2007)], USA. Currently the development of preproduction tools with targeted shipment of 2009 is well under way. This paper discusses the most critical items for EUVL development, namely, EUV imaging and EUV sources. Furthermore, it elaborates on the necessary development of masks and resists and, for example, quantifies how resist diffusion length can impact imaging capabilities. Results obtained and lessons learned with the Alpha Demo tools are discussed, as well as potential solutions to some of the remaining challenges. Additionally, this paper explains how EUV can realize high productivity (>100 wafersh) and high resolutions (<22 nm) to continue the cost-effective shrink of semiconductors for several generations.

Original languageEnglish
Pages (from-to)2204-2207
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number6
DOIs
Publication statusPublished - Nov 2008
Externally publishedYes

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Extreme ultraviolet lithography
Lithography
lithography
Semiconductor materials
Imaging techniques
X rays
congressional reports
projection
Masks
Wood
Belgium
Productivity
lessons learned
Wavelength
diffusion length
productivity
submerging
scanners
x rays
masks

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title = "Extreme ultraviolet lithography: Status and prospects",
abstract = "Extreme ultraviolet lithography (EUVL) using 13.5 nm wavelength light is the leading candidate to succeed 193 nm immersion lithography, enabling semiconductor chips with features smaller than 22 nm. Several major programs worldwide have developed this technology in recent years [D. A. Tichenor, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H. Stuten (1993), Vol. 18, p. 79; H. Kinachita, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H Stulen (1993), Vol. 18, p. 74; J. P. H. Benschop, W. M. Kaiser, and D. C. Ockwell, Proc. SPIE 3676, 246 (1999)] and in 2006, ASML shipped the first EUV Alpha Demo tools (NA=0.25 full-field scanners) to IMEC in Belgium [A. M. Goethals, Proc. SPIE 6517, 651709 (2007)] and CNSE in Albany [O. Wood, Proc. SPIE 6517, 6517-041 (2007)], USA. Currently the development of preproduction tools with targeted shipment of 2009 is well under way. This paper discusses the most critical items for EUVL development, namely, EUV imaging and EUV sources. Furthermore, it elaborates on the necessary development of masks and resists and, for example, quantifies how resist diffusion length can impact imaging capabilities. Results obtained and lessons learned with the Alpha Demo tools are discussed, as well as potential solutions to some of the remaining challenges. Additionally, this paper explains how EUV can realize high productivity (>100 wafersh) and high resolutions (<22 nm) to continue the cost-effective shrink of semiconductors for several generations.",
author = "Jos Benschop and Vadim Banine and Sjoerd Lok and Erik Loopstra",
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month = "11",
doi = "10.1116/1.3010737",
language = "English",
volume = "26",
pages = "2204--2207",
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Extreme ultraviolet lithography : Status and prospects. / Benschop, Jos; Banine, Vadim; Lok, Sjoerd; Loopstra, Erik.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 6, 11.2008, p. 2204-2207.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Extreme ultraviolet lithography

T2 - Status and prospects

AU - Benschop, Jos

AU - Banine, Vadim

AU - Lok, Sjoerd

AU - Loopstra, Erik

PY - 2008/11

Y1 - 2008/11

N2 - Extreme ultraviolet lithography (EUVL) using 13.5 nm wavelength light is the leading candidate to succeed 193 nm immersion lithography, enabling semiconductor chips with features smaller than 22 nm. Several major programs worldwide have developed this technology in recent years [D. A. Tichenor, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H. Stuten (1993), Vol. 18, p. 79; H. Kinachita, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H Stulen (1993), Vol. 18, p. 74; J. P. H. Benschop, W. M. Kaiser, and D. C. Ockwell, Proc. SPIE 3676, 246 (1999)] and in 2006, ASML shipped the first EUV Alpha Demo tools (NA=0.25 full-field scanners) to IMEC in Belgium [A. M. Goethals, Proc. SPIE 6517, 651709 (2007)] and CNSE in Albany [O. Wood, Proc. SPIE 6517, 6517-041 (2007)], USA. Currently the development of preproduction tools with targeted shipment of 2009 is well under way. This paper discusses the most critical items for EUVL development, namely, EUV imaging and EUV sources. Furthermore, it elaborates on the necessary development of masks and resists and, for example, quantifies how resist diffusion length can impact imaging capabilities. Results obtained and lessons learned with the Alpha Demo tools are discussed, as well as potential solutions to some of the remaining challenges. Additionally, this paper explains how EUV can realize high productivity (>100 wafersh) and high resolutions (<22 nm) to continue the cost-effective shrink of semiconductors for several generations.

AB - Extreme ultraviolet lithography (EUVL) using 13.5 nm wavelength light is the leading candidate to succeed 193 nm immersion lithography, enabling semiconductor chips with features smaller than 22 nm. Several major programs worldwide have developed this technology in recent years [D. A. Tichenor, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H. Stuten (1993), Vol. 18, p. 79; H. Kinachita, OSA Proceedings on Soft X-Ray Projection Lithography, edited by A. M. Hawryluk and R. H Stulen (1993), Vol. 18, p. 74; J. P. H. Benschop, W. M. Kaiser, and D. C. Ockwell, Proc. SPIE 3676, 246 (1999)] and in 2006, ASML shipped the first EUV Alpha Demo tools (NA=0.25 full-field scanners) to IMEC in Belgium [A. M. Goethals, Proc. SPIE 6517, 651709 (2007)] and CNSE in Albany [O. Wood, Proc. SPIE 6517, 6517-041 (2007)], USA. Currently the development of preproduction tools with targeted shipment of 2009 is well under way. This paper discusses the most critical items for EUVL development, namely, EUV imaging and EUV sources. Furthermore, it elaborates on the necessary development of masks and resists and, for example, quantifies how resist diffusion length can impact imaging capabilities. Results obtained and lessons learned with the Alpha Demo tools are discussed, as well as potential solutions to some of the remaining challenges. Additionally, this paper explains how EUV can realize high productivity (>100 wafersh) and high resolutions (<22 nm) to continue the cost-effective shrink of semiconductors for several generations.

U2 - 10.1116/1.3010737

DO - 10.1116/1.3010737

M3 - Article

VL - 26

SP - 2204

EP - 2207

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 6

ER -